A novel high figure-of-merit SOI SJ LDMOS with ultra-strong charge accumulation effect
A novel high figure-of-merit SOI SJ LDMOS with ultra-strong charge accumulation effect
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一种具有超强电荷积累效应的新型高品质SOI SJ LDMOS
DOI：
10.1088/1674-4926/36/3/034007
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发表时间：
2015
影响因子：
5.1
通讯作者：
Li Zhaoji
中科院分区：
文献类型：
--
作者：
Xu Qing;Wei Jie;Zhang Bo;Li Zhaoji
提出了一种具有超强电荷积累效应的SOI超结LDMOS。它有两个主要特点：具有高k（HK）电介质和阶梯掺杂N柱的辅助累积沟槽型延伸栅极（TEG）（TEG-SD SJ LDMOS）。在导通状态下，电子通过TEG从源极到漏极累积在HK电介质的侧壁处。此外，HK电介质的高介电常数导致超强的电荷积累效应。结果，形成超低电阻电流路径。因此，比导通电阻（罗恩，sp）大大减小，并且与漂移掺杂浓度无关。在截止状态下，阶梯掺杂的N柱通过电荷补偿有效地抑制了衬底辅助耗尽效应。此外，HK介质的整形效应和阶跃掺杂N柱引入的新电场峰增强了漂移区的电场。因此，BV得到改善。仿真结果表明，TEG-SD SJ LDMOS的罗恩，sp为1.06 mΩ·cm 2，BV为217 V。与传统SJ LDMOS相比，TEG-SD SJ LDMOS的罗恩，sp降低了77.5%，BV提高了33%，表现出44 MW/cm 2的高品质因数（FOM = BV 2/罗恩，sp）。
A novel silicon-on-insulator (SOI) super-junction (SJ) LDMOS with an ultra-strong charge accumulation effect is proposed. It has two key features: an assisted-accumulation trench-type extending gate (TEG) with a high-k (HK) dielectric and a step-doped N pillar (TEG-SD SJ LDMOS). In the on-state, electrons accumulate at the sidewall of the HK dielectric from the source to the drain by the TEG. Furthermore, the high permittivity of the HK dielectric leads to an ultra-strong charge accumulation effect. As a result, an ultra-low resistance current path is formed. The specific on-resistance (Ron, sp) is thus greatly reduced and is independent of the drift doping concentration. In the off-state, the step-doped N pillar effectively suppresses the substrate-assisted depletion effect by charge compensation. Moreover, the reshape effect of the HK dielectric and the new electric field (E-field) peak introduced by the step-doped N pillar enhance the drift region E-field. Hence, the BV is improved. Simulation indicates that the TEG-SD SJ LDMOS achieves an extremely low Ron, sp of 1.06 mΩ·cm2 and a BV of 217 V. Compared with the conventional SJ LDMOS, the TEG-SD SJ LDMOS decreases the Ron, sp by 77.5% and increases the BV by 33%, exhibiting a high figure of merits (FOM = BV2/Ron, sp) of 44 MW/cm2.
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具有化合物埋层的高压 SOI LDMOS
DOI：
10.1088/1674-4926/33/10/104003
发表时间：
2012-10
期刊：
Chinese Journal of Semiconductors
影响因子：
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作者：
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DOI：
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发表时间：
2005
期刊：
Chinese Journal of Semiconductors
影响因子：
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影响因子：
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作者：
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影响因子：
4.9
作者：
Luo, Xiaorong;Jiang, Y. H.;Li, Z. J.
通讯作者：
Li, Z. J.