Effects of Cyclohexane- Monoxime and Dioxime on the Electrodeposition of Cobalt
Effects of Cyclohexane- Monoxime and Dioxime on the Electrodeposition of Cobalt
复制标题
环己烷一肟和二肟对钴电沉积的影响
DOI：
10.1016/j.electacta.2017.05.130
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发表时间：
2017
影响因子：
6.6
通讯作者：
Huang, Q.
中科院分区：
文献类型：
--
作者：
Lyons, T.W.;Huang, Q.
研究了在环己烷肟（CHO）和环己烷二肟（CHD）两种添加剂存在下钴的电沉积，这两种添加剂相差一个肟基。进行循环伏安法（CV）、具有脉冲旋转速率的恒电位沉积和具有添加剂注入的恒电流沉积以了解抑制钴电沉积的中间物种的形成和分解。虽然观察到CHD对钴沉积的强烈且快速的抑制，但CHO的抑制效果要不那么明显。由于抑制作用的破坏，CHD在CV中观察到负微分电阻，这与吸收的Co-CHD螯合物种类的减少有关。CHD的临界旋转速率被定义为能够实现完全抑制的沉积状态所需的最小旋转。添加剂浓度与临界转速的平方根成反比关系，证明了中间体在溶液中的扩散与中间体通过掺入存款而消耗之间的平衡。虽然一对相邻的肟基是必要的一个强大的快速抑制作用，笨重的分子结构和更强的螯合导致更强的抑制。
Electrodeposition of cobalt was studied in presence of two additives, cyclohexane oxime (CHO) and cyclohexane dioxime (CHD), which differ by one oxime group. Cyclic voltammetry (CV), potentiostatic deposition with pulsed rotation rates, and galvanostatic deposition with injections of additives were carried out to understand the formation and breakdown of intermediate species that suppress cobalt electrodeposition. While strong and fast suppression was observed for CHD on cobalt deposition, the suppression effect of CHO was much less pronounced. A negative differential resistance in CV was observed for CHD due to a breakdown of suppression, which was related to the reduction of absorbed Co-CHD chelate species. A critical rotation rate was defined for CHD as the minimum rotation required to enable a fully suppressed deposition state. An inversely proportional relation between additive concentration and the square root of critical rotation rate demonstrated an equilibrium between the diffusion of the intermediate in solution and the consumption of intermediate by incorporation into deposit. While a pair of adjacent oxime groups was necessary for a strong fast suppression effect, bulkier molecular structures and stronger chelating resulted in stronger suppression.
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