Effect of Bi2O3 seed layer on crystalline orientation and ferroelectric properties of Bi3.25La0.75Ti3O12 thin films prepared by rf-magnetron sputtering method
Effect of Bi2O3 seed layer on crystalline orientation and ferroelectric properties of Bi3.25La0.75Ti3O12 thin films prepared by rf-magnetron sputtering method
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Bi2O3种子层对射频磁控溅射法制备Bi3.25La0.75Ti3O12薄膜晶体取向和铁电性能的影响
DOI：
10.1063/1.3055362
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发表时间：
2009-03
影响因子：
3.2
通讯作者：
张端明
中科院分区：
文献类型：
--
作者：
张端明
采用射频磁控溅射法在Pt(111)/Ti/SiO2/Si衬底上制备了Bi3.25La0.75Ti3O12 （BLT）薄膜。研究了退火工艺、Bi2O3种子层厚度和位置对BLT薄膜结构和电性能的影响。当采用两步退火工艺时，x射线衍射图表明具有Bi2O3种子层的BLT薄膜具有c轴优先取向。与Pt/BLT/Bi2O3/Pt结构膜相比，Pt/Bi2O3/BLT/Bi2O3/Pt结构膜具有更高的c向取向。Bi2O3种子层的掺入显著提高了BLT薄膜的铁电性能。在14 V的外加电压下，具有18 nm厚Bi2O3种子层的Bi2O3/BLT/Bi2O3电容器的剩余极化和矫顽力电压分别为45.2 μC/cm2和9.2 V。此外，具有18nm厚Bi2O3种子层的Pt/Bi2O3/BLT/Bi2O3/Pt薄膜即使在6×109开关后也具有良好的疲劳耐久性。
Bi3.25La0.75Ti3O12 (BLT) thin films with Bi2O3 seed layers were prepared on Pt(111)/Ti/SiO2/Si substrate by rf-magnetron sputtering method. The effect of annealing procedure, thickness, and position of Bi2O3 seed layer on the structural and electrical properties of BLT thin film was investigated. When using a two-step annealing procedure, the x-ray diffraction pattern indicated that BLT thin film with a Bi2O3 seed layer showed c-axis preference orientation. Compared with Pt/BLT/Bi2O3/Pt structure film, the Pt/Bi2O3/BLT/Bi2O3/Pt structure film showed higher oriented to c direction. The ferroelectric property of BLT thin film improved remarkably with the incorporation of Bi2O3 seed layer. Under the applied voltage of 14 V, the remnant polarization and coercive voltage of the Bi2O3/BLT/Bi2O3 capacitor with 18-nm-thick Bi2O3 seed layer were 45.2 μC/cm2 and 9.2 V, respectively. Moreover, the Pt/Bi2O3/BLT/Bi2O3/Pt film with 18-nm-thick Bi2O3 seed layers exhibited good fatigue endurance even after 6×109 switchin...
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影响因子：
1.5
作者：
K. Aoki;Y. Fukuda;Ken Numata Ken Numata-Ken-Numata;Akitoshi Nishimura Akitoshi Nishimura-Akitoshi-Nishimura
通讯作者：
K. Aoki;Y. Fukuda;Ken Numata Ken Numata-Ken-Numata;Akitoshi Nishimura Akitoshi Nishimura-Akitoshi-Nishimura
影响因子：
3.2
作者：
D. Bao;T. Chiu;N. Wakiya;K. Shinozaki;N. Mizutani
通讯作者：
D. Bao;T. Chiu;N. Wakiya;K. Shinozaki;N. Mizutani
影响因子：
64.8
作者：
DEARAUJO, CAP;CUCHIARO, JD;SCOTT, JF
通讯作者：
SCOTT, JF
DOI：
10.1143/jjap.34.5096
发表时间：
1995-09-01
期刊：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
影响因子：
--
作者：
ATSUKI, T;SOYAMA, N;OGI, K
通讯作者：
OGI, K
影响因子：
2.5
作者：
Dawley, JT;Radspinner, R;Uhlmann, DR
通讯作者：
Uhlmann, DR