Ultrathin GaN film and AlGaN/GaN heterostructure grown on thick AlN buffer by MOCVD
Ultrathin GaN film and AlGaN/GaN heterostructure grown on thick AlN buffer by MOCVD
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通过 MOCVD 在厚 AlN 缓冲层上生长超薄 GaN 薄膜和 AlGaN/GaN 异质结构
DOI：
10.1016/j.ceramint.2022.08.176
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发表时间：
2022-08
影响因子：
5.2
通讯作者：
Yue Hao
中科院分区：
文献类型：
--
作者：
Kai Chen;Yachao Zhang;Jincheng Zhang;Xing Wang;Yixin Yao;Jinbang Ma;Yue Hao
High-quality AlGaN/GaN/AlN heterostructures with thin GaN channel and thick AlN buffer layer were grown by metal organic chemical vapor deposition (MOCVD) on SiC substrate. By analyzing growth modes of GaN films on AlN buffer layers with different thicknesses, it is revealed that film-forming point of GaN grown on AlN buffer increases with the increase in AlN buffer thickness. Accordingly, new growth model of GaN on AlN buffer was proposed, which shows that there is an optimal matching value between Ga source flow rate and AlN thickness when GaN is grown on AlN buffer of different thicknesses. Under optimal conditions, AlGaN/GaN/AlN heterostructures with 120 nm thin GaN channel layer and thick AlN buffer show excellent carrier-limited domain, high crystalline quality, and good transport properties. Results in this work would be useful for preparing high-quality heterostructures on AlN buffer and high electron mobility transistor (HEMT) devices. Moreover, these findings can also be applied to the growth of other hyperfine structures (quantum wells, superlattices, and digital alloys) in the future.
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DOI：
10.1088/0022-3727/49/17/175108
发表时间：
2016-04
期刊：
Journal of Physics D: Applied Physics
影响因子：
--
作者：
D. Nilsson;E. Janzén;A. Kakanakova-Georgieva
通讯作者：
D. Nilsson;E. Janzén;A. Kakanakova-Georgieva
毫米波%20AlGaN/GaN%20HEMT%20With%2043.6%%20功率附加效率%20at%2040%20GHz%20Fabriated%20by%20Atomic%20Layer%20Etching%20Gate%20Recess
影响因子：
4.9
作者：
Zhang, Yichuan;Huang, Sen;Liu, Xinyu
通讯作者：
Liu, Xinyu
影响因子：
2.3
作者：
S. Ozaki;J. Yaita;A. Yamada;Y. Kumazaki;Y. Minoura;T. Ohki;N. Okamoto;N. Nakamura;J. Kotani
通讯作者：
S. Ozaki;J. Yaita;A. Yamada;Y. Kumazaki;Y. Minoura;T. Ohki;N. Okamoto;N. Nakamura;J. Kotani
影响因子：
3.4
作者：
J.S. Raj Kumar;D. Nirmal;M. Hooda;Surinder Singh;J. Ajayan;L. Arivazhagan
通讯作者：
J.S. Raj Kumar;D. Nirmal;M. Hooda;Surinder Singh;J. Ajayan;L. Arivazhagan
影响因子：
4.9
作者：
R. Chu;Zhen Chen;Y. Pei;S. Newman;S. Denbaars;U. Mishra
通讯作者：
R. Chu;Zhen Chen;Y. Pei;S. Newman;S. Denbaars;U. Mishra