Well Thickness Dependence of the Internal Quantum Efficiency and Carrier Concentration in GaN-Based Multiple Quantum Well Light-Emitting Diodes
Well Thickness Dependence of the Internal Quantum Efficiency and Carrier Concentration in GaN-Based Multiple Quantum Well Light-Emitting Diodes
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GaN基多量子阱发光二极管中内部量子效率和载流子浓度的阱厚度依赖性
DOI：
10.1007/s11664-015-4203-9
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发表时间：
2015
影响因子：
2.1
通讯作者：
LF Feng
中科院分区：
文献类型：
--
作者：
B Xu;D Li;CD Wang;LF Feng
基于速率方程获得了七阱多量子阱（MQW）GaN基发光二极管（LED）的内量子效率（IQE）对阱厚度的依赖特性，而无需设置具体的系数值。 IQE 随着孔厚度的增加而增加，直到厚度达到 3.0 nm，其中 IQE 达到最大值，然后随着孔厚度的进一步增加而下降。该 IQE 阱厚度依赖性与测量的发光效率一致。此外，使用辐射复合系数 B 的各种值（其中包含载流子密度和极化场的影响（因此取决于阱厚度）），我们计算了速率系数。结果表明，限制 IQE 井厚依赖性的主要因素是 Shockley-Read-Hall (SRH) 非辐射复合。此外，在 3.0 nm 厚的阱中，当 B= 1010cm3s−1 时，对应于 SRH 非辐射复合的 A 和对应于载流子泄漏（或俄歇复合）的 C 的速率方程中的最佳值分别为 2.25 × 108s−1 和 9.2 × 10−31cm6s−1。此外，在给定电流下，使用 3.0 nm 的阱厚度实现了最大载流子浓度和最小辐射复合寿命。总体而言，对于所研究的七阱 MQW InGaN/GaN LED，最佳阱厚度为 3.0 nm。
The internal quantum efficiency (IQE) dependence characteristics of seven-well multiple quantum well (MQW) GaN-based light-emitting diodes (LEDs) on well thickness were obtained based on the rate equation without setting specific values for the coefficients. The IQE increased with increasing well thickness until the thickness reached 3.0 nm, where the IQE reached a maximum, and then decreased with further increases in well thickness. This IQE well thickness dependence is consistent with that of the measured light emission efficiency. In addition, using various values of the radiative recombination coefficientB, which contained the effects of the carrier density and polarization fields (and was thus dependent on the well thickness), we calculated the rate coefficients. The results indicate that the main factor that is limiting the well thickness dependence of the IQE is Shockley–Read–Hall (SRH) nonradiative recombination. Also, atB= 1010cm3s−1in a 3.0 nm thick well, the optimal values in the rate equation ofA, corresponding to the SRH nonradiative recombination, andC, corresponding to the carrier leakage (or Auger recombination), are 2.25 × 108s−1and 9.2 × 10−31cm6s−1, respectively. Also, at a given current, the maximum carrier concentration and the minimum radiative recombination lifetime were achieved using a 3.0 nm well thickness. Overall, for the seven-well MQW InGaN/GaN LEDs studied, the optimal well thickness was 3.0 nm.
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影响因子：
3.2
作者：
Xing Li;S. Okur;Fan Zhang;V. Avrutin;Ü. Özgür;H. Morkoç;S. M. Hong;S. Yen;T. Hsu;A. Matulionis
通讯作者：
Xing Li;S. Okur;Fan Zhang;V. Avrutin;Ü. Özgür;H. Morkoç;S. M. Hong;S. Yen;T. Hsu;A. Matulionis
影响因子：
4
作者：
Li, Y.-L.;Huang, R.;Lai, Y.-H.
通讯作者：
Lai, Y.-H.
影响因子：
4
作者：
Shen, Y. C.;Mueller, G. O.;Krames, M. R.
通讯作者：
Krames, M. R.
影响因子：
3.3
作者：
Kioupakis, Emmanouil;Yan, Qimin;Van de Walle, Chris G.
通讯作者：
Van de Walle, Chris G.
影响因子：
4
作者：
Ryu, Han-Youl;Kim, Hyun-Sung;Shim, Jong-In
通讯作者：
Shim, Jong-In