High quality self-separated GaN crystal grown on a novel nanoporous template by HVPE.
High quality self-separated GaN crystal grown on a novel nanoporous template by HVPE.
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通过 HVPE 在新型纳米多孔模板上生长高质量自分离 GaN 晶体
DOI：
10.1038/s41598-018-21607-3
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发表时间：
2018-02-16
影响因子：
4.6
通讯作者：
Hao X
中科院分区：
文献类型：
--
作者：
Huo Q;Shao Y;Wu Y;Zhang B;Hu H;Hao X
在这项研究中，一种新的纳米多孔模板，通过两步蚀刻工艺从MOCVD-GaN/Al 2 O3（MGA）的电化学蚀刻顺序，然后化学湿法蚀刻。采用氢化物气相外延（HVPE）方法，利用两次刻蚀的MOCVD-GaN/Al 2 O3（TEMGA）模板生长GaN晶体。GaN晶体在蚀刻的纳米孔形成的空隙的帮助下自发地从TEMGA模板分离。利用几种技术来表征从TEMGA模板获得的自支撑GaN晶体的质量。结果表明，与MGA上生长的GaN晶体相比，所得GaN晶体的质量明显提高。这种方便的技术可以应用于生长高质量的自支撑GaN晶体。
In this study, a novel nanoporous template was obtained by a two-step etching process from MOCVD-GaN/Al2O3(MGA) with electrochemical etching sequentially followed by chemical wet etching. The twice-etched MOCVD-GaN/Al2O3(TEMGA) templates were utilized to grow GaN crystals by hydride vapor phase epitaxy (HVPE) method. The GaN crystals were separated spontaneously from the TEMGA template with the assistance of voids formed by the etched nanopores. Several techniques were utilized to characterize the quality of the free-standing GaN crystals obtained from the TEMGA template. Results showed that the quality of the as-obtained GaN crystals was improved obviously compared with those grown on the MGA. This convenient technique can be applied to grow high-quality free-standing GaN crystals.
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影响因子：
4
作者：
Chao, C. L.;Chiu, C. H.;Cheng, S. J.
通讯作者：
Cheng, S. J.
影响因子：
1.8
作者：
Huang, Hsin-Hsiung;Chao, Chu-Li;Lee, Wei-I
通讯作者：
Lee, Wei-I
影响因子：
3.1
作者：
Shao, Yongliang;Dai, Yuanbin;Tian, Yuan
通讯作者：
Tian, Yuan
影响因子：
3.2
作者：
Chierchia, R;Böttcher, T;Hommel, D
通讯作者：
Hommel, D
影响因子：
3
作者：
Lin, Chaotong;Yu, Guanghui;Li, Aizhen
通讯作者：
Li, Aizhen