High-Quality Amorphous Silicon Carbide for Hybrid Photonic Integration Deposited at a Low Temperature.
High-Quality Amorphous Silicon Carbide for Hybrid Photonic Integration Deposited at a Low Temperature.
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用于混合光子集成的高质量非晶碳化硅的低温沉积。
DOI：
10.1021/acsphotonics.3c00968
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发表时间：
2023-10-18
期刊：
影响因子：
7
通讯作者：
Zadeh, Iman Esmaeil
中科院分区：
文献类型：
--
作者：
Lopez-Rodriguez, Bruno;van der Kolk, Roald;Aggarwal, Samarth;Sharma, Naresh;Li, Zizheng;van der Plaats, Daniel;Scholte, Thomas;Chang, Jin;Gro''blacher, Simon;Pereira, Silvania F.;Bhaskaran, Harish;Zadeh, Iman Esmaeil
近年来，集成光子平台大量涌现，每个平台都显示出其独特的优势和不足。考虑到不同平台的处理不兼容性，集成光子学领域的一个巨大挑战仍然是将不同光学材料的优势结合到一个混合集成平台中。碳化硅因其高折射率、强的二阶和三阶非线性以及在可见光和近红外范围内宽的透明窗口而成为人们非常感兴趣的材料。然而，集成碳化硅(SIC)一直是困难的，而且目前的方法依赖于转移键合技术，这些技术既耗时又昂贵，并且缺乏对层厚的精度。在这里，我们展示了在150°C下沉积的高折射率非晶碳化硅(a-SiC)薄膜，并通过制作标准的光子波导和环形谐振器来验证该平台的高性能。单模环形腔的本征品质因数在Qint=(4.7-5.7)×105范围内，对应的光学损耗在0.78-1.06dB/cm之间。然后，我们展示了该平台未来与超低损耗薄SiN和LiNbO_3平台进行异质集成的潜力。
Integrated photonic platforms have proliferated in recent years, each demonstrating its unique strengths and shortcomings. Given the processing incompatibilities of different platforms, a formidable challenge in the field of integrated photonics still remains for combining the strengths of different optical materials in one hybrid integrated platform. Silicon carbide is a material of great interest because of its high refractive index, strong second- and third-order nonlinearities, and broad transparency window in the visible and near-infrared range. However, integrating silicon carbide (SiC) has been difficult, and current approaches rely on transfer bonding techniques that are time-consuming, expensive, and lacking precision in layer thickness. Here, we demonstrate high-index amorphous silicon carbide (a-SiC) films deposited at 150 °C and verify the high performance of the platform by fabricating standard photonic waveguides and ring resonators. The intrinsic quality factors of single-mode ring resonators were in the range of Qint = (4.7–5.7) × 105 corresponding to optical losses between 0.78 and 1.06 dB/cm. We then demonstrate the potential of this platform for future heterogeneous integration with ultralow-loss thin SiN and LiNbO3 platforms.
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10.1109/jstqe.2018.2846021
发表时间：
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