Hybrid-Phase Microstructural ITO-Stabilized ZnO TFTs With Self-Aligned Coplanar Architecture
Hybrid-Phase Microstructural ITO-Stabilized ZnO TFTs With Self-Aligned Coplanar Architecture
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具有自对准共面架构的混合相微结构 ITO 稳定 ZnO TFT
DOI：
10.1109/led.2017.2764505
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发表时间：
2017-12
影响因子：
4.9
通讯作者：
Hoi Sing Kwok
中科院分区：
文献类型：
--
作者：
Sunbin Deng;Rongsheng Chen;Guijun Li;Zhihe Xia;Meng Zhang;Wei Zhou;Man Wong;Hoi Sing Kwok
本文发现，硅烷源或正硅酸四乙酯源等离子体增强化学气相沉积（PECVD） SiO2层覆盖的杂相微结构ito稳定ZnO薄膜在O2退火处理后，其电阻率变化有显著差异。除了氢相关因素外，硅掺杂现象和硅烷源PECVD工艺也是杂相微结构ito稳定ZnO薄膜持久低电阻率状态的原因。通过结合微分pecvd和do2退火工艺，制备了自定向共面tft，它们具有良好的电学特性，平均场效应迁移率为19.56 cm2/Vs，亚阈值摆幅为105 mV/ 10年，以及对栅极偏置应力的强大稳定性。
In this letter, hybrid-phase microstructural ITO-stabilized ZnO thin films, which were capped by silane-sourced or tetraethyl-orthosilicate-sourced plasma-enhanced chemical vapor deposition (PECVD) SiO2 layers, were found to present remarkably different resistivity variation after O2 annealing treatment. Besides hydrogen-related factors, the silicon-doping phenomenon along with the silane-sourced PECVD process was also responsible for the durable low-resistivity state of the hybrid-phase microstructural ITO-stabilized ZnO thin films. Via a combination of differentiatedPECVD andO2 annealingprocesses, the self-aligned coplanar TFTs were fabricated, and they exhibited good electrical characteristics with an average field-effect mobility of 19.56 cm2/Vs, and a subthreshold swing of 105 mV/decade, as well as robust stability against gate-bias stress.
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影响因子：
4.6
作者：
Kim YK;Ahn CH;Yun MG;Cho SW;Kang WJ;Cho HK
通讯作者：
Cho HK
影响因子：
2.7
作者：
K. Seshan;D. Schepis
通讯作者：
K. Seshan;D. Schepis
影响因子：
--
作者：
Wu, Cheng-Han;Hsieh, Hsing-Hung;Wu, Chung-Chih
通讯作者：
Wu, Chung-Chih
DOI：
10.1143/jjap.25.l776
发表时间：
1986-09-01
期刊：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
影响因子：
--
作者：
MINAMI, T;SATO, H;TAKATA, S
通讯作者：
TAKATA, S
影响因子：
--
作者：
Nathan, Arokia;Lee, Sungsik;Robertson, John
通讯作者：
Robertson, John