Highly compact (4F2) and well behaved nano-pillar transistor controlled resistive switching cell for neuromorphic system application.
Highly compact (4F2) and well behaved nano-pillar transistor controlled resistive switching cell for neuromorphic system application.
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DOI：
10.1038/srep06863
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发表时间：
2014-10-31
影响因子：
4.6
通讯作者：
Kwong DL
中科院分区：
文献类型：
--
作者：
Chen B;Wang X;Gao B;Fang Z;Kang J;Liu L;Liu X;Lo GQ;Kwong DL
为了简化神经形态系统的结构，迫切需要开发具有低操作功率、高密度集成和良好控制突触行为的能力的突触细胞。在这项研究中，我们开发了一种基于电阻开关器件（ReRAM）的突触细胞，由CMOS兼容的纳米制造技术制造。所开发的突触单元由一个垂直栅极全包围Si纳米柱晶体管（1 T）和一个直接堆叠在垂直晶体管顶部的基于过渡金属氧化物的电阻开关器件（1 R）组成。由于纳米柱晶体管的垂直结构和对ON/OFF性能的优异可控性，1 T1 R突触单元显示出优异的特性，例如具有4F 2足迹的极高密度集成能力、超低操作电流（<2 nA）、快速开关速度（<10 ns）、多级数据存储和可控突触开关，这些对于简化神经形态系统的结构是极其期望的。
To simplify the architecture of a neuromorphic system, it is extremely desirable to develop synaptic cells with the capacity of low operation power, high density integration, and well controlled synaptic behaviors. In this study, we develop a resistive switching device (ReRAM)-based synaptic cell, fabricated by the CMOS compatible nano-fabrication technology. The developed synaptic cell consists of one vertical gate-all-around Si nano-pillar transistor (1T) and one transition metal-oxide based resistive switching device (1R) stacked on top of the vertical transistor directly. Thanks to the vertical architecture and excellent controllability on the ON/OFF performance of the nano-pillar transistor, the 1T1R synaptic cell shows excellent characteristics such as extremely high-density integration ability with 4F2 footprint, ultra-low operation current (<2 nA), fast switching speed (<10 ns), multilevel data storage and controllable synaptic switching, which are extremely desirable for simplifying the architecture of neuromorphic system.
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