Rapid, General-Purpose Patterning of Silicon Nitride Thin Films Under Ambient Conditions for Applications Including Fluid Channel and SERS Substrate Formation
Rapid, General-Purpose Patterning of Silicon Nitride Thin Films Under Ambient Conditions for Applications Including Fluid Channel and SERS Substrate Formation
复制标题
在环境条件下对氮化硅薄膜进行快速通用图案化，适用于流体通道和 SERS 基板形成等应用
DOI：
10.1021/acsanm.0c00248
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发表时间：
2020
影响因子：
5.9
通讯作者：
Dwyer, Jason R.
中科院分区：
文献类型：
--
作者：
Sheetz, Brian S.;Bandara, Y.M. Nuwan;Rickson, Benjamin;Auten, Michael;Dwyer, Jason R.
氮化硅薄膜在微、纳米制造中作为蚀刻停止掩模是有用的。作为结构元件，它们广泛应用于单分子传感、透射电子显微镜、超快光谱、超流体研究和高通量液体过滤等领域。手持式“无焰”特斯拉线圈打火机用于在涂覆硅片的200纳米氮化硅（SiNx）薄膜上制造通孔。该工艺允许空间定向KOH蚀刻下的Si。图形化可以通过硬掩膜或空间受限放电光栅来实现，为快速使用提供了低障碍，否则研究人员可能无法获得传统的、仪器密集型的微纳米制造工作流程。演示了一般的图图化能力，随后形成了适合微流体应用的沟槽。最后，在放电处理的薄膜表面溅射镀上金，形成表面增强拉曼光谱（SERS）衬底，然后用于检测ppm浓度的测试分析物。
Silicon nitride thin films are useful as etch-stop masks in micro- and nanofabrication. As structural elements, they are prevalent in applications as diverse as single-molecule sensing, transmission electron microscopy, ultrafast spectroscopy, superfluidity studies, and high flux liquid filtering. A hand-held “flameless” Tesla-coil lighter was used to create vias through 200 nm silicon nitride (SiNx) films coating silicon wafers. The processing allowed spatially directed KOH etching of the underlying Si. Patterning could be achieved with a hard mask or rastering of the spatially confined discharge, offering—with low barriers to rapid use—particular capabilities that might otherwise be out of reach to researchers without access to conventional, instrumentation-intensive micro- and nanofabrication workflows. General patterning capabilities were demonstrated, followed by the formation of a trench suitable for microfluidic applications. Finally, a discharge-treated thin film surface was sputter coated with gold to create a surface enhanced Raman spectroscopy (SERS) substrate that was then used to detect a test analyte at ppm concentration.
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基于溶液的氮化硅上的光图案金膜形成。
影响因子：
9.5
作者：
Y. N. D. Bandara;B. Karawdeniya;Julie C. Whelan;Lucas D S Ginsberg;Jason R Dwyer
通讯作者：
Jason R Dwyer
DOI：
10.1146/annurev.anchem.1.031207.112814
发表时间：
2008-01-01
影响因子：
8
作者：
Stiles, Paul. L.;Dieringer, Jon A.;Van Duyne, Richard R.
通讯作者：
Van Duyne, Richard R.
在氮化硅表面形成伯胺：基于等离子体的直接功能化途径。
DOI：
10.1021/la0635653
发表时间：
2007
期刊：
Langmuir : the ACS journal of surfaces and colloids
影响因子：
--
作者：
R. Stine;C. L. Cole;K. Ainslie;S. Mulvaney;L. Whitman
通讯作者：
L. Whitman
影响因子：
5.9
作者：
Karawdeniya, Buddini Iroshika;Bandara, Y. M. Nuwan D. Y.;Dwyer, Jason R.
通讯作者：
Dwyer, Jason R.
影响因子：
16.6
作者：
Karawdeniya BI;Bandara YMNDY;Nichols JW;Chevalier RB;Dwyer JR
通讯作者：
Dwyer JR