Reduction of Polarization Field Strength in Fully Strained c-Plane InGaN/(In)GaN Multiple Quantum Wells Grown by MOCVD.
Reduction of Polarization Field Strength in Fully Strained c-Plane InGaN/(In)GaN Multiple Quantum Wells Grown by MOCVD.
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MOCVD 生长的全应变 c 面 InGaN/(In) GaN 多量子阱中极化场强度的降低
DOI：
10.1186/s11671-016-1732-y
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发表时间：
2016-12
影响因子：
--
通讯作者：
Yang H
中科院分区：
文献类型：
--
作者：
Zhang F;Ikeda M;Zhang SM;Liu JP;Tian AQ;Wen PY;Cheng Y;Yang H
研究了用金属有机物化学气相沉积法在蓝宝石衬底上生长的c面InGaN/（In）GaN多量子阱（MQW）结构中的偏振场。对于不同的样品，量子威尔斯阱中的铟组分从14.8%变化到26.5%。在充分考虑相关影响的基础上，对光致发光波长进行了理论计算，并与实测波长进行了比较。当铟含量低于17.3%时，测量波长与理论值符合得很好。但当铟含量大于17.3%时，测量值比计算值要短得多。这种差异归因于多量子阱中极化场的减小。对于较低铟含量的多量子阱，可以保持100%的理论极化，而当铟含量较高时，极化场显著下降。当掺铟量为26.5%时，极化场可减弱到理论值的23%。通过X射线衍射倒易空间映射，排除了应变弛豫作为极化降低的起源，因为在结构中没有晶格弛豫的迹象。讨论了极化减弱的可能原因。
The polarization fields in c-plane InGaN/(In)GaN multiple quantum well (MQW) structures grown on sapphire substrate by metal-organic chemical vapor deposition are investigated in this paper. The indium composition in the quantum wells varies from 14.8 to 26.5% for different samples. The photoluminescence wavelengths are calculated theoretically by fully considering the related effects and compared with the measured wavelengths. It is found that when the indium content is lower than 17.3%, the measured wavelengths agree well with the theoretical values. However, when the indium content is higher than 17.3%, the measured ones are much shorter than the calculation results. This discrepancy is attributed to the reduced polarization field in the MQWs. For the MQWs with lower indium content, 100% theoretical polarization can be maintained, while, when the indium content is higher, the polarization field decreases significantly. The polarization field can be weakened down to 23% of the theoretical value when the indium content is 26.5%. Strain relaxation is excluded as the origin of the polarization reduction because there is no sign of lattice relaxation in the structures, judging by the X-ray diffraction reciprocal space mapping. The possible causes of the polarization reduction are discussed.
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