Efficiency of silane gas generation in high-rate silicon etching by narrow-gap microwave hydrogen plasma
Efficiency of silane gas generation in high-rate silicon etching by narrow-gap microwave hydrogen plasma
复制标题
窄间隙微波氢等离子体高速硅蚀刻中硅烷气体的产生效率
DOI：
10.1088/0022-3727/49/3/035202
复制
发表时间：
2016
期刊：
影响因子：
--
通讯作者：
Hiroaki Kakiuchi and Kiyoshi Yasutake
中科院分区：
文献类型：
--
作者：
Hiromasa Ohmi;Takeshi Funaki;Hiroaki Kakiuchi and Kiyoshi Yasutake
研究了窄禁带高压微波H2等离子体中硅(Si)的刻蚀特性及其产生SiH4气体的效率。结果表明，即使在高压条件下，对硅样品进行冷却也能有效地获得较高的刻蚀速率，即使在输入功率密度大于250W cm−3的情况下，气体样品和硅样品的过高温升也能被抑制，这可能是因为等离子体间隙很窄。局部刻蚀深度随H2气压和输入等离子体功率的增加而单调增加，而刻蚀质量随H2气压的增加而减小。通过同时增加氢气压力和输入功率，获得了最大的硅刻蚀速率为38μm−1。这被认为与窄禁带微波等离子体在相对较低的温度下产生的高H密度有关。讨论了硅刻蚀的能量效率以及刻蚀后的硅和氢气对SiH4生成的利用效率。较低的输入功率有利于提高硅刻蚀的能效。硅的利用效率，即生成的SiH4与刻蚀的硅的摩尔比，随着气体在等离子体中平均停留时间的减少而增加，而氢的利用效率与气体停留时间无关。
The silicon (Si) etching characteristics and the related efficiency of the etched Si to generate SiH 4 gas in narrow-gap high-pressure microwave H 2 plasma have been investigated. It was found that cooling of the Si sample is effective to obtain a high etching rate even under high pressure conditions, and the excess temperature increase of both the gas and Si sample can be suppressed even at an input power density of more than 250 W cm− 3, probably because of the narrow plasma gap. The local etching depth monotonically increased with increasing H 2 pressure and input plasma power, whereas the etching weight decreased with increasing H 2 pressure. By simultaneously increasing the H 2 pressure and input power, a maximum Si etching rate of 38 μm min− 1 was achieved. This is considered to be related to the high H density generated in the narrow-gap microwave plasma at relatively low temperatures. The energy efficiency of Si etching and the utilization efficiency of the etched Si and H 2 gas for SiH 4 formation are discussed. Lower input power is favorable for high energy efficiency of Si etching. The Si utilization efficiency, which is defined as the molar ratio of generated SiH 4 to etched Si, increases with decreasing average gas residence time in the plasma, whereas H 2 utilization efficiency is independent of the gas residence time.
登录
查看更多内容
低压等离子体条件下固体硅与氢的反应性
影响因子：
2.8
作者：
A. Webb;S. Vepřek
通讯作者：
S. Vepřek
射频和微波氢放电中的氢原子产率
影响因子：
3.6
作者：
L. St;M. Moisan
通讯作者：
M. Moisan
氢对硅的电子轰击诱导各向异性蚀刻
影响因子：
3.6
作者：
S. Vepřek;F. Sarott
通讯作者：
F. Sarott
氢原子与 Si(111) 表面的相互作用：吸附、提取和蚀刻
影响因子：
4.4
作者：
A. Dinger;C. Lutterloh;J. Küppers
通讯作者：
J. Küppers
通过 SIH3 物质的解吸来解释化学蚀刻多孔硅中的发光淬灭
影响因子：
4
作者：
N. Zoubir;M. Vergnat;T. Delatour;A. Burneau;P. Donato
通讯作者：
P. Donato