Effects of Al Preflow on the Uniformity of an AlN Nucleation Layer and GaN Grown on Si (111) Substrate
Effects of Al Preflow on the Uniformity of an AlN Nucleation Layer and GaN Grown on Si (111) Substrate
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Al预流对Si(111)衬底上生长的AlN成核层和GaN均匀性的影响
DOI：
10.1007/s11664-022-09560-4
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发表时间：
2022-04
影响因子：
2.1
通讯作者：
Yue Hao
中科院分区：
文献类型：
--
作者：
Jinbang Ma;Yachao Zhang;Yixin Yao;Tao Zhang;Yifan Li;Qian Feng;Zhen Bi;Jincheng Zhang;Yue Hao
本文研究了Al预流对Si衬底上生长的氮化铝（AlN）成核层均匀性的影响，发现适当增加Al预流过程中的气体流量可以大大提高位错的均匀性，并改善成核层的晶体质量和表面形貌。AlN（102）面在中心、半径的一半和边缘的半高宽（FWHM）分别从826 arcsec/897 arcsec/1196 arcsec减小到691 arcsec/738 arcsec/900 arcsec。而且，在优化的AlN层上生长的氮化铝镓/氮化镓（AlGaN/GaN）的方块电阻均匀性从6.66%降低到2.84%，这是一个显著的改善，有利于GaN基器件性能的提高。
In this work, the influence of Al preflow on the uniformity of an aluminum nitride (AlN) nucleation layer grown on Si substrate has been investigated herein, finding that increasing the gas flow rate appropriately during the preflow of aluminum can greatly improve the uniformity of dislocations, as well as the crystal quality and surface morphology of the nucleation layer. The full width at half maximum (FWHM) of the AlN (102) plane in the center, half of the radius and the edge decreases from 826 arcsec/897 arcsec/1196 arcsec to 691 arcsec/738 arcsec/900 arcsec, respectively. Moreover, the sheet resistance uniformity of aluminum gallium nitride/gallium nitride (AlGaN/GaN) grown on the optimized AlN layer is reduced from 6.66% to 2.84%, which is a significant improvement and beneficial to the improvement of the performance of GaN-based devices.
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影响因子：
1.5
作者：
Y. Sugawara;Y. Ishikawa;A. Watanabe;M. Miyoshi;T. Egawa
通讯作者：
Y. Sugawara;Y. Ishikawa;A. Watanabe;M. Miyoshi;T. Egawa
影响因子：
6.2
作者：
R. Xiang;Y. Fang;J. Dai;Luo Zhang;C. Su;Z. H. Wu;Chenhui Yu;H. Xiong;Chenlong Chen
通讯作者：
R. Xiang;Y. Fang;J. Dai;Luo Zhang;C. Su;Z. H. Wu;Chenhui Yu;H. Xiong;Chenlong Chen
影响因子：
1.7
作者：
Y. Ni;Zhiyuan He;J. Zhong;Yao Yao-Yao;Fan Yang;P. Xiang;Baijun Zhang;Yang Liu
通讯作者：
Y. Ni;Zhiyuan He;J. Zhong;Yao Yao-Yao;Fan Yang;P. Xiang;Baijun Zhang;Yang Liu
影响因子：
1.8
作者：
A. Lange;S. Mahajan
通讯作者：
A. Lange;S. Mahajan
影响因子：
2.3
作者：
Cheng, Kai;Liang, Hu;Chung, Hua
通讯作者：
Chung, Hua