Mechanism of high growth rate for diamond-like carbon films synthesized by helicon wave plasma chemical vapor deposition
Mechanism of high growth rate for diamond-like carbon films synthesized by helicon wave plasma chemical vapor deposition
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螺旋波等离子体化学气相沉积类金刚石碳膜高生长机理
DOI：
10.1088/2058-6272/aa94bd
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发表时间：
2018-02
影响因子：
1.7
通讯作者：
Xuemei Wu
中科院分区：
文献类型：
--
作者：
Peiyu Ji;Jun Yu;Tianyuan Huang;Chenggang Jin;Yan Yang;Lanjian Zhuge;Xuemei Wu
采用螺旋波等离子体化学气相沉积（HWP-CVD）技术，以Ar/CH 4为混合气体，在室温下快速生长类金刚石（DLC）薄膜。利用拉曼光谱和扫描电子显微镜对薄膜的微观结构和形貌进行了表征。用发射光谱和朗缪尔探针对螺旋波激发的等离子体进行了诊断。讨论了HWP-CVD高速率制备类金刚石薄膜的机理。当CH 4流量为85 sccm时，DLC膜的生长速率达到最大值54 μm·h，这归因于螺旋波等离子体放电过程中较高的等离子体密度。CH和Hα自由基在类金刚石薄膜的生长过程中起着重要作用。结果表明，Hα自由基有利于C=C键从sp到sp的形成和稳定。
A high growth rate fabrication of diamond-like carbon (DLC) films at room temperature was achieved by helicon wave plasma chemical vapor deposition (HWP-CVD) using Ar/CH4 gas mixtures. The microstructure and morphology of the films were characterized by Raman spectroscopy and scanning electron microscopy. The diagnosis of plasma excited by a helicon wave was measured by optical emission spectroscopy and a Langmuir probe. The mechanism of high growth rate fabrication for DLC films by HWP-CVD has been discussed. The growth rate of the DLC films reaches a maximum value of 54 μm h at the CH4 flow rate of 85 sccm, which is attributed to the higher plasma density during the helicon wave plasma discharge. The CH and Hα radicals play an important role in the growth of DLC films. The results show that the Hα radicals are beneficial to the formation and stabilization of C=C bond from sp to sp.
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可能的运动学几何形状
DOI：
10.1007/s11433-012-4788-4
发表时间：
2010-07
期刊：
Science China Physics,Mechanics & Astonomy
影响因子：
--
作者：
TIAN Yu;WU XiaoNing;XU Zhan;ZHOU Bin
通讯作者：
ZHOU Bin
影响因子：
5.4
作者：
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通讯作者：
N. Gavrilov;A. Mamaev;S. Plotnikov;A. Rubshtein;I. Trakhtenberg;V. A. Ugov
影响因子：
1.5
作者：
M. Hassan;B. Pramanik;A. Hatta
通讯作者：
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影响因子：
6.7
作者：
Mingzhong Wu;X. Tian;Muqin Li;C. Gong;R. Wei
通讯作者：
Mingzhong Wu;X. Tian;Muqin Li;C. Gong;R. Wei
影响因子：
3.8
作者：
Jie Zhou;Ina T Martin;R. Ayers;E. Adams;Dongping Liu;E. R. Fisher
通讯作者：
Jie Zhou;Ina T Martin;R. Ayers;E. Adams;Dongping Liu;E. R. Fisher