The effects of growth parameters on the RF-MBE growth of dilute InNSb films
The effects of growth parameters on the RF-MBE growth of dilute InNSb films
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生长参数对稀InNSb薄膜RF-MBE生长的影响
DOI:
10.1088/0022-3727/43/30/305405
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发表时间:
2010-08
期刊:
影响因子:
--
通讯作者:
W Lu*
中科院分区:
文献类型:
--
作者:
Y H Zhang, P P Chen*, H Yin, T X Li;W Lu*
A series of InNSb films have been grown on InSb (0 0 1) substrates under various growth conditions by plasma-assisted molecular beam epitaxy (MBE). The InNSb films were characterized by high-resolution x-ray diffraction, atomic force microscopy and Raman
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影响因子:
4
作者:
D. Zhang;Wei Liu;Y. Wang;X. Chen;Jing Li;Zhiming Huang;Sam Zhang
通讯作者:
D. Zhang;Wei Liu;Y. Wang;X. Chen;Jing Li;Zhiming Huang;Sam Zhang
DOI:
10.1088/0022-3727/41/16/165301
发表时间:
2008-08
期刊:
Journal of Physics D: Applied Physics
影响因子:
--
作者:
K. P. Lim;S. F. Yoon;H. T. Pham;S. Tripathy
通讯作者:
K. P. Lim;S. F. Yoon;H. T. Pham;S. Tripathy
影响因子:
3.2
作者:
Q. Zhuang;A. Godenir;A. Krier;K. Lai;S. Haywood
通讯作者:
Q. Zhuang;A. Godenir;A. Krier;K. Lai;S. Haywood
影响因子:
4
作者:
M. Weyers;Michio Sato
通讯作者:
M. Weyers;Michio Sato
影响因子:
4
作者:
Li, W;Pessa, M;Likonen, J
通讯作者:
Likonen, J