Memristive behavior and forming mechanism of homogeneous TiOx device
Memristive behavior and forming mechanism of homogeneous TiOx device
复制标题
均质TiOx器件的忆阻行为及形成机制
DOI：
10.1016/j.materresbull.2014.10.011
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发表时间：
2015
影响因子：
5.4
通讯作者：
Wang Minghong
中科院分区：
文献类型：
--
作者：
Dong Ruixin;Yan Xunling;Zhang Zhang;Wang Minghong
A homogeneous titanium oxide device is fabricated by Molecular Beam Epitaxy and the excellent memristive behavior could be observed. The resistance ratio between high resistance state and low resistance state increases as the thickness of titanium oxide or the oxygen content reduces. The forming voltage is lower than the previous report. Based on the experimental results, we suggest a double-interface conductive filament model and calculate the current–voltage curve of the device in agreement with experimental measurements. The result indicates that the forming voltage of the device will rise with increasing of the chemical potential differences across the two interfaces. In other words, the switching voltage could be adjusted by selecting a proper electrode and oxide materials.
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影响因子：
41.2
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Szot, K;Speier, W;Waser, R
通讯作者：
Waser, R
影响因子：
1.1
作者：
D. Biolek;V. Biolková;Zdeněk Biolek
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D. Biolek;V. Biolková;Zdeněk Biolek
影响因子：
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A. Plecenik;M. Tomášek;T. Plecenik;M. Truchlý;J. Noskovič;M. Zahoran;T. Roch;M. Belogolovskii
影响因子：
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作者：
Strukov, Dmitri B.;Snider, Gregory S.;Williams, R. Stanley
通讯作者：
Williams, R. Stanley
影响因子：
4
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通讯作者：
Y. Do;J. Kwak;Y. C. Bae;Kyooho Jung;H. Im;Jin-Pyo Hong