High-performance broadband photoresponse of self-powered Mg2Si/Si photodetectors
High-performance broadband photoresponse of self-powered Mg2Si/Si photodetectors
复制标题
自供电 Mg2Si/Si 光电探测器的高性能宽带光响应
DOI：
10.1088/1361-6528/ac3f53
复制
发表时间：
2021-12
期刊：
影响因子：
3.5
通讯作者：
Mingsheng Xu
中科院分区：
文献类型：
--
作者：
Qinghai Zhu;Peng Ye;Youmei Tang;Xiaodong Zhu;Zhiyuan Cheng;Jing Xu;Mingsheng Xu
摘要。红外光电器件能够在恶劣环境下工作，具有出色的保密性和可靠性。然而，由于带隙值较大，大多数半导体材料难以探测到红外光信号。本文报道的Mg2Si/Si异质结光电探测器（PDs）具有成本低、工艺简单、环境友好以及与硅CMOS技术兼容的优点，在零偏压下测试了532至1550 nm的宽带光谱响应。当入射光波长为808 nm时，Mg2Si/Si光电探测器（PD）的响应率为1.04 a W−1，比探测率为1.51×1012 Jones。此外，我们发现Ag纳米粒子（Ag_NPs）组装在Mg2Si层上可以大大提高Mg2Si/Si PD的性能。采用Ag_NPs的Mg2Si/Si器件在808 nm光照下的响应度和比探测率分别为2.55 A W−1和2.60×1012 Jones。这些优异的光探测性能可以归因于我们生长的Mg2Si材料的高质量和异质结中强大的内置电场效应，而Ag_NPs诱导的局部表面等离子体效应和局部电磁场可以进一步增强这种效应。本研究对新型自供电型硅基红外发光二极管的研制具有重要的指导意义。
Abstract. Infrared optoelectronic devices are capable of operating in harsh environments with outstanding confidentiality and reliability. Nevertheless, suffering from the large band gap value, most semiconductor materials are difficult to detect infrared light signals. Here, Mg2Si/Si heterojunction photodetectors (PDs), which possess the advantages of low-cost, easy process, environmental friendliness, and compatibility with silicon CMOS technology, have been reported with a broadband spectral response as tested from 532 to 1550 nm under zero-bias. When the incident light wavelength is 808 nm, the Mg2Si/Si photodetector (PD) has a responsivity of 1.04 A W−1 and a specific detectivity of 1.51×1012 Jones. Furthermore, we find that the Ag nanoparticles (Ag_NPs) assembled on the Mg2Si layer can greatly improve the performance of the Mg2Si/Si PD. The responsivity and specific detectivity of Mg2Si/Si device with Ag_NPs under 808 nm illumination are 2.55 A W−1 and 2.60×1012 Jones, respectively. These excellent photodetection performances can be attributed to the high-quality of our grown Mg2Si material and the strong built-in electric field effect in the heterojunction, which can be further enhanced by the local surface plasmon effect and local electromagnetic field induced by Ag_NPs. Our study would provide significant guidance for the development of new self-powered infrared PDs based on silicon materials.
登录
查看更多内容
用于高性能 PbI2 紫外光电探测器的 Cera alba 辅助超净石墨烯转移
影响因子：
3.5
作者：
Han Xiao;Tao Liang;Xuewei Zhang;Pei Zhao;Xiaodong Pi;Quan Xie;Mingsheng Xu
通讯作者：
Mingsheng Xu
基于 PtSe2/硅纳米线阵列异质结的超快灵敏光电探测器，具有 200 至 1550 nm 的多波段光谱响应
影响因子：
9.7
作者：
Zeng Longhui;Lin Shenghuang;Lou Zhenhua;Yuan Huiyu;Long Hui;Li Yanyong;Lu Wei;Lau Shu Ping;Wu Di;Tsang Yuen Hong
通讯作者：
Tsang Yuen Hong
DOI：
10.32657/10356/65053
发表时间：
2015
期刊：
--
影响因子：
--
作者：
Pengyu Chen
通讯作者：
Pengyu Chen
影响因子：
1.1
作者：
A. Evirgen;J. Abautret;J. P. Perez;A. Cordat;A. Nedelcu;P. Christol
通讯作者：
A. Evirgen;J. Abautret;J. P. Perez;A. Cordat;A. Nedelcu;P. Christol
基于混合维 PdSe2/SiNWA 异质结构的光伏探测器，用于自驱动、宽带光电探测、红外成像和湿度传感
影响因子：
11.9
作者：
Di Wu;Cheng Jia;Fenghua Shi;Longhui Zeng;Pei Lin;Lin Dong;Zhifeng Shi;Yongtao Tian;Xinjian Li;Jiansheng Jie
通讯作者：
Jiansheng Jie