High Performance Flip-Structure Enhancement-Mode HEMT with Face-to-Face Double Gates.
High Performance Flip-Structure Enhancement-Mode HEMT with Face-to-Face Double Gates.
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高性能翻转结构增强型面对面双栅极HEMT
DOI：
10.1186/s11671-022-03713-4
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发表时间：
2022-08-11
影响因子：
--
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提出了一种新型的双栅倒装结构增强型（E型）高电子迁移率阶梯场板晶体管（DFF HEMT）。它的特点是面对面的双栅极，包括一个顶部沟槽MIS栅极与一个台阶场板和底部平面MIS栅极，这是短接在一起。在导通状态下，双栅极不仅可以通过较高的电势恢复2DEG，而且可以形成电子积累层，从而增加饱和输出电流，降低导通电阻。面对面的双栅极通过使用功函数差来一起耗尽2DEG以实现E模式，而不是通过蚀刻用于常规MIS栅极E模式HEMT的栅极下的AlGaN层。双栅结构不仅避免了刻蚀损伤，而且保持了高阈值电压和低导通电阻。同时，阶梯栅场板调制电场分布以增加BV。为了便于制作，带台阶场板的沟槽栅必须位于器件顶部，形成倒装结构。倒装结构也有利于减小衬底中的漏电流。DFF HEMT的模拟Vth、BV和Id分别为0.8 V、465 V和494 mA/mm。DFF HEMT的FOM比传统的MIS-FP HEMT和MIS HEMT分别高79.8%和444.2%。
A novel double gates flip-structure enhancement-mode (E-mode) high electron mobility transistor with step field plate (DFF HEMT) is proposed. It features face-to-face double gates, including a top trench MIS gate with a step field plate and a bottom planar MIS gate, which is shorted together. In the on-state, the double gates not only can restore the 2DEG by the higher electric potential, but also can form the electron accumulation layers, and thus increase the saturation output current and reduce the on-resistance. The face-to-face double gates together deplete the 2DEG by using the work function difference to realize E-mode, instead of by etching the AlGaN layer under the gate for the conventional MIS gate E-mode HEMT. The double-gate structure not only avoids etch damage, but also maintains both high threshold voltage and low on-resistance. Meanwhile, the step gate field plate modulates E-field distribution to increase the BV. In order to easily fabricate, the trench gate with step field plate must be located on the top of device, forming the flip-structure. The flip-structure is also beneficial to decrease the leakage current in the substrate. The simulated Vth, BV and Id of the DFF HEMT are 0.8 V, 465 V and 494 mA/mm, respectively. The FOM of the DFF HEMT is 79.8% and 444.2% higher than those of the conventional MIS-FP HEMT and MIS HEMT.
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影响因子：
4.9
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2.3
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