Influence of annealing atmosphere on ZnO thin films grown by MOCVD
Influence of annealing atmosphere on ZnO thin films grown by MOCVD
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退火气氛对MOCVD生长ZnO薄膜的影响
DOI：
10.1016/j.apsusc.2006.03.092
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发表时间：
2006-12
影响因子：
6.7
通讯作者：
Liang, Hongwei
中科院分区：
文献类型：
--
作者：
Yang, Tianpeng;Hu, Lizhong;Sun, Jingchang;Bian, Jiming;Du, Guotong;Liang, Hongwei
采用金属有机物化学气相沉积（MOCVD）方法在c面蓝宝石衬底上制备了ZnO薄膜。在生长后的同一腔室中，在不同的气氛和不同的压力下对沉积态样品进行退火处理。通过X射线衍射（XRD）、原子力显微镜（AFM）、霍尔效应和光学吸收测量研究了退火气氛对沉积薄膜的电学、结构和光学性质的影响。结果表明，退火气氛对薄膜的电学和结构性能有很大的影响，在氧气气氛中退火的薄膜的影响更为明显。在60 Pa的氧气中退火的薄膜的结构和电学性能得到了最显着的改善。在最佳退火条件下，获得了最低的电阻率0.28Ωcm和最高的迁移率19.6cm ~ 2 v-1 s-1。同时，吸收光谱变陡，光学带隙红移回单晶值。
ZnO films were deposited on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). Annealing treatments for as-deposited samples were performed in different atmosphere under various pressures in the same chamber just after growth. The effect of annealing atmosphere on the electrical, structural, and optical properties of the deposited films has been investigated by means of X-ray diffraction (XRD), atomic force microscope (AFM), Hall effect, and optical absorption measurements. The results indicated that the electrical and structural properties of the films were highly influenced by annealing atmosphere, which was more pronounced for the films annealed in oxygen ambient. The most significant improvements for structural and electrical properties were obtained for the film annealed in oxygen under the pressure of 60Pa. Under the optimum annealing condition, the lowest resistivity of 0.28Ωcm and the highest mobility of 19.6cm2v−1s−1were obtained. Meanwhile, the absorbance spectra turned steeper and the optical band gap red shifted back to the single-crystal value.
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影响因子：
2.4
作者：
C. Liu;B. Zhang;N. Binh;Y. Segawa
通讯作者：
C. Liu;B. Zhang;N. Binh;Y. Segawa
影响因子：
2.1
作者：
Rau, U;Schmidt, M
通讯作者：
Schmidt, M
影响因子：
1.5
作者：
S. Myong;S. Baik;C. Lee;Woo Young Cho Woo Young Cho-Woo-Young-Cho;Koeng Su Lim Koeng Su Lim-Koeng-Su-Lim
通讯作者：
S. Myong;S. Baik;C. Lee;Woo Young Cho Woo Young Cho-Woo-Young-Cho;Koeng Su Lim Koeng Su Lim-Koeng-Su-Lim
影响因子：
1.8
作者：
Fons, P;Iwata, K;Matsubara, K
通讯作者：
Matsubara, K
DOI：
10.1590/s1516-14392003000200011
发表时间：
2003-06
影响因子：
1.7
作者：
A. Sabioni;Marcelo José Ferreira Ramos;W. B. Ferraz
通讯作者：
A. Sabioni;Marcelo José Ferreira Ramos;W. B. Ferraz