Deep ultraviolet laser direct write for patterning sol-gel InGaZnO semiconducting micro/nanowires and improving field-effect mobility.

Deep ultraviolet laser direct write for patterning sol-gel InGaZnO semiconducting micro/nanowires and improving field-effect mobility.
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DOI:
10.1038/srep10490
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发表时间:
2015-05-27
期刊:
影响因子:
4.6
通讯作者:
Wang KH
Wang KH
中科院分区:
综合性期刊3区
文献类型:
--
作者:
Lin HC;Stehlin F;Soppera O;Zan HW;Li CH;Wieder F;Ponche A;Berling D;Yeh BH;Wang KH

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采用深紫外激光直接写入铟镓锌氧化物(IGZO)前驱体溶液,形成微米级和纳米级图案。定向DUV激光束避免了衬底加热并抑制了衍射效应。还开发了IGZO前体溶液,以满足直接半导体化的要求,并通过在中等温度下的热退火实现半导体性能。起始材料的DUV诱导的交联允许在薄膜晶体管中直接写入半导体沟道,但它也改善了场效应迁移率和表面粗糙度。采用XPS、FTIR、椭圆偏振光谱仪和AFM对材料进行了分析,并讨论了深紫外对最终材料结构的影响。DUV照射步骤导致无机网络的光解和部分冷凝,其将溶胶-凝胶层冻结在均匀分布中,降低了在原子尺度下热诱导重组的可能性。激光辐照可以使氧化物纳米线具有高分辨率的微图案化和足够高的场效应迁移率,这使得氧化物纳米线的制备变得容易,从而可以应用于太阳能电池、显示器、柔性电子器件和生物医学传感器。
Deep-UV (DUV) laser was used to directly write indium-gallium-zinc-oxide (IGZO) precursor solution and form micro and nanoscale patterns. The directional DUV laser beam avoids the substrate heating and suppresses the diffraction effect. A IGZO precursor solution was also developed to fulfill the requirements for direct photopatterning and for achieving semi-conducting properties with thermal annealing at moderate temperature. The DUV-induced crosslinking of the starting material allows direct write of semi-conducting channels in thin-film transistors but also it improves the field-effect mobility and surface roughness. Material analysis has been carried out by XPS, FTIR, spectroscopic ellipsometry and AFM and the effect of DUV on the final material structure is discussed. The DUV irradiation step results in photolysis and a partial condensation of the inorganic network that freezes the sol-gel layer in a homogeneous distribution, lowering possibilities of thermally induced reorganization at the atomic scale. Laser irradiation allows high-resolution photopatterning and high-enough field-effect mobility, which enables the easy fabrication of oxide nanowires for applications in solar cell, display, flexible electronics, and biomedical sensors.
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