Metal Capping Layer Effects on Electromigration Failure Phenomena of Plasma Etched Copper Lines
Metal Capping Layer Effects on Electromigration Failure Phenomena of Plasma Etched Copper Lines
复制标题
金属覆盖层对等离子蚀刻铜线电迁移失效现象的影响
DOI：
10.1149/2162-8777/abbb71
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发表时间：
2020
影响因子：
2.2
通讯作者：
Kuo, Yue
中科院分区：
文献类型：
--
作者：
Su, Jia Quan;Li, Mingqian;Kuo, Yue
研究了等离子刻蚀铜线在钛、钨、钼覆盖层玻璃基板上的电迁移失效现象。线路的失效表现为线路电阻的急剧增加，与温度的剧烈变化相对应。铜线的表面颜色在失效过程中也发生了变化。对于无盖铜线，颜色的变化是由于表面在升温时的氧化所致。对于封顶线，颜色的变化是由于温度的升高，从块状铜膜中扩散出的额外的铜组分，促进了空洞的形成，缩短了失效时间。在相同的电流密度条件下，铜向钛钨覆盖层的扩散比向钼覆盖层的扩散要小，这是前者寿命较长的原因。这项研究证实了盖层材料对铜线的寿命至关重要。
The electromigration failure phenomena of plasma etched copper lines on glass substrates with a titanium tungsten or molybdenum capping layer were studied. The failure of the line showed as the abrupt increase of the line resistance, which corresponded to the drastic change of the temperature. The surface color of the copper line also changed in the failure process. For the uncapped copper line, the color change was due to the surface oxidation at the raised temperature. For the capped line, the color change was contributed by the additional copper component diffused from the bulk copper film due to the raise of the temperature, which enhanced voids formation and shortened the failure time. Under the same current density condition, the copper diffusion into the titanium tungsten capping layer was less serious than that into the molybdenum capping layer, which was the reason of the longer lifetime of the former lines. This research confirms that the capping layer material is critical to the lifetime of the copper line.
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DOI：
10.1116/1.576869
发表时间：
1990
期刊：
Journal of Vacuum Science and Technology
影响因子：
--
作者：
Y. Kuo;J. Crowe
通讯作者：
J. Crowe
影响因子：
3.9
作者：
Y. Kuo
通讯作者：
Y. Kuo
使用 TEA CO2 激光器在减压下获得的铜表面特征分析
影响因子：
6.7
作者：
M. Momčilović;M. Trtica;J. Ciganovic;J. Savović;J. Stašić;M. Kuzmanovic
通讯作者：
M. Kuzmanovic
用于 ULSI 的超细线铜导体的电阻率增加
影响因子：
1.5
作者：
K. Hinode;Y. Hanaoka;K. Takeda;S. Kondo
通讯作者：
S. Kondo
影响因子：
2.3
作者：
P. Tamirisa;G. Levitin;N. Kulkarni;D. Hess
通讯作者：
D. Hess