Bias stress and humidity exposure of amorphous InGaZnO thin-film transistors with atomic layer deposited Al2O3 passivation using dimethylaluminum hydride at 200 °C
Bias stress and humidity exposure of amorphous InGaZnO thin-film transistors with atomic layer deposited Al2O3 passivation using dimethylaluminum hydride at 200 °C
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使用二甲基氢化铝在 200 °C 下原子层沉积 Al2O3 钝化的非晶 InGaZnO 薄膜晶体管的偏置应力和湿度暴露
DOI：
10.1088/1361-6463/ab6e97
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
Uraoka Yukiharu
中科院分区：
文献类型：
--
作者：
Corsino Dianne C;Bermundo Juan Paolo S;Fujii Mami N;Takahashi Kiyoshi;Ishikawa Yasuaki;Uraoka Yukiharu
采用原子层沉积(ALD)技术，用二甲基铝氢化物(DMAH)制备了厚度为25 nm的Al_2O_3钝化膜，制备了高可靠的非晶InGaZnO(a-IGZO)(In：Ga：Zn：O=2：2：1：7)薄膜晶体管(TFT)。研究了不同温度下沉积的Al_2O_3钝化对栅极偏压和湿度暴露后TFT特性的影响。经Al_2O_3钝化的a-IGZO TFT的通断电流比(I on/I Off)约为108，线性迁移率(µ)为9~13 cm2 V−1 S−1。实验结果表明，Al2 O_3钝化的a-IGZO TFT的最佳应力温度为200℃，在10000℃的应力作用下，a-IGZO TFT的导通电压漂移仅为0.3V，对正偏置应力和负偏置光照应力的影响较小，−为2.7V。此外，在湿度暴露后观察到的降解可以忽略不计。X射线光电子能谱分析表明，在200℃钝化的器件中，金属-氧(M-O)键的峰面积比最高，金属-氧空位(M-Vo)键的峰面积比最低，这与a-IGZO体区和Al2O3a-IGZO界面附近的陷阱位数量最少有关。此外，在较低的沉积温度(⩽100℃)下，低密度的Al2O3中碳污染和氢含量较高，而在较高的沉积温度(⩾300C)下，形成了低密度的Al2O3。在高密度Al_2O_3中也存在较高的氢浓度。Al_2O_3钝化到a-IGZO沟道中的氢掺杂在a-IGZO和SiO_2栅绝缘层的界面上产生了体缺陷和陷阱位。在200℃下，获得了高质量的氧化铝钝化，密度高，杂质少，提高了器件的可靠性。这些结果可以应用于长期持续的设备运行，这些设备在不同的应力下都是可靠的。
Highly reliable amorphous InGaZnO (a-IGZO)(In: Ga: Zn: O= 2: 2: 1: 7) thin-film transistors (TFTs) were fabricated with 25 nm-thick Al 2 O 3 passivation deposited by atomic layer deposition (ALD) using dimethylaluminum hydride (DMAH). Al 2 O 3 passivation deposited at various temperatures was studied to determine its effect on TFT behavior following gate bias stress and humidity exposure. The Al 2 O 3-passivated a-IGZO TFTs demonstrated an on-off current ratio (I on/I off) of~ 10 8 and linear mobility (µ) of 9 to 13 cm 2 V− 1 s− 1. An optimum ALD temperature of 200 C was demonstrated to result in Al 2 O 3-passivated a-IGZO TFTs with very small on-voltage shifts of 0.3 V and− 2.7 V against positive bias stress and negative bias illumination stress (NBIS) after 10 000 s of stress time. Furthermore, negligible degradation was observed after humidity exposure. The results of x-ray photoelectron spectroscopic analysis of the O 1s spectra showed the highest peak area ratio for metal–oxygen (M–O) bonding and lowest metal–oxygen vacancy (M–V o) bonding, relating to the least amount of trap sites both in the bulk region of a-IGZO and near the interface of Al 2 O 3/a-IGZO, for the device passivated at 200 C. It was also found that at a low deposition temperature (⩽ 100 C), low-density Al 2 O 3 was formed with high carbon contamination and hydrogen while at a high deposition temperature (⩾ 300 C), high hydrogen concentration was also present in high-density Al 2 O 3. The hydrogen incorporation from Al 2 O 3 passivation to a-IGZO channel creates bulk defects and trap sites as well as in the interface of a-IGZO and SiO 2 gate insulator. At 200 C, high quality Al 2 O 3 passivation was achieved with high density and reduced impurities leading to improved device reliability. These results can be applied to long term sustained device operations which are reliable against different stresses.
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影响因子：
64.8
作者：
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通讯作者：
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影响因子：
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作者：
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作者：
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DOI：
--
发表时间：
2019
期刊：
影响因子：
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作者：
Toshio Kamiya;Keisuke Ide;Hideya Kumomi;and Hideo Hosono
通讯作者：
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影响因子：
2.2
作者：
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