A theoretical and experimental study on effect of growth time on self-catalyzed InAs nanowires

A theoretical and experimental study on effect of growth time on self-catalyzed InAs nanowires
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生长时间对自催化InAs纳米线影响的理论与实验研究

DOI:
10.1016/j.apsusc.2020.146174
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发表时间:
2020-07
影响因子:
6.7
通讯作者:
Tao Yang
Tao Yang
中科院分区:
材料科学1区
文献类型:
--
作者:
Xiaoye Wang;Xue Bai;Xiaoguang Yang;Xiaoming Liu;Wenna Du;Tao Yang

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我们详细研究了生长时间对金属有机物化学气相沉积法在Si衬底上生长InAs纳米线的影响。结果表明,InAs纳米线的轴向生长是非线性的,且随纳米线直径的不同而呈现不同的生长趋势。薄纳米线在长度上比厚纳米线生长得快,并且薄纳米线和厚纳米线的半径都不依赖于生长时间。基于自催化生长机理,我们建立了一个动力学生长过程来模拟硅上InAs纳米线的生长。我们分析了一些相关性,包括长度-时间,直径-时间和长度-直径的相关性。计算结果与实验结果吻合较好。结果表明,纳米线的生长饱和度和生长速率取决于In原子的扩散长度、种子粒子的初始直径和单位面积上的In原子数量。
We in detail investigated the effect of growth time on InAs nanowires (NWs) grown on Si substrates by metal-organic chemical vapor deposition. It is found that the axial growth of InAs NWs is nonlinear and shows different trends with different NW diameters. Thin NWs grow faster than thick NWs in length, and the radius of both thin and thick NWs have no dependence on growth time. Based on self-catalyzed growth mechanism, we established a kinetic growth process to simulate the growth of InAs NWs on Si. We analyzed some dependences, including length-time, diameter-time and length-diameter dependences. Calculations are in good agreements with experimental ones. It indicates that growth saturation and growth rates of NWs are determined by diffusion length of In adatoms, initial diameter of seed particles and the amount of adatoms per unit area.
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