Microstructure, mechanical and tribological properties of TiMoN/Si3N4 nano-multilayer films deposited by magnetron sputtering
Microstructure, mechanical and tribological properties of TiMoN/Si3N4 nano-multilayer films deposited by magnetron sputtering
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磁控溅射TiMoN/Si3N4纳米多层薄膜的微观结构、力学和摩擦学性能
DOI：
10.1016/j.apsusc.2014.11.125
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发表时间：
2015-01
影响因子：
6.7
通讯作者：
Jiang Bailing
中科院分区：
文献类型：
--
作者：
Wang Tao;Zhang Guojun;Jiang Bailing
采用磁控溅射法，通过改变Si靶电流，制备了不同Si 3 N4层厚度的TiMoN/Si 3 N4纳米多层膜。TiMoN/Si 3 N4纳米多层膜的结构和性能与Si 3 N4层的结构密切相关。当Si_3N_4层厚度小于0.8nm时，Si_3N_4层仍保持晶化状态，TiMoN/SiNx薄膜的硬度和摩擦系数均比MoNx/SiNx薄膜高得多。随着Si_3N_4含量的进一步增加，Si_3N_4层向非晶态转变，TiMoN/Si_3N_4薄膜的硬度从29.9 GPa逐渐降低到20.1 GPa，COF从0.55增加到0.72。结果表明，与TiAlSiN/Si_3N_4纳米多层膜相比，氮化钼的加入使薄膜的摩擦学性能得到了明显的改善。
TiMoN/Si3N4nano-multilayer films with different Si3N4layer thickness were synthesized using magnetron sputtering by changing the Si target current. The TiMoN/Si3N4nano-multilayer films exhibited strong microstructure and properties dependence on the structures of Si3N4layer. When Si3N4layer thickness (lSi3N4) was smaller than 0.8 nm, Si3N4layers maintained crystallization state, the as-deposited TiMoN/SiNxfilms exhibited much higher hardness and comparable coefficient of friction (COF) than that of MoNx/SiNxfilms. With the further increase oflSi3N4, Si3N4layer transformed to amorphous state, the hardness of TiMoN/Si3N4films decreased gradually from 29.9 to 20.1 GPa and COF increased from 0.55 to 0.72. It totally shows better tribological properties than TiAlSiN/Si3N4nano-multilayer films as a result of incorporating molybdenum nitride.
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影响因子：
5.4
作者：
Xiaodong Zhu;Di Yue;C. Shang;M. Fan;B. Hou
通讯作者：
Xiaodong Zhu;Di Yue;C. Shang;M. Fan;B. Hou
影响因子：
5.4
作者：
Musil, J.;Jirout, M.
通讯作者：
Jirout, M.
影响因子：
4
作者：
F. Ying;R. Smith;D. Srolovitz
通讯作者：
F. Ying;R. Smith;D. Srolovitz
影响因子：
8.6
作者：
A. Madan;Ilwon Kim;S. Cheng;P. Yashar;V. Dravid;S. Barnett
通讯作者：
A. Madan;Ilwon Kim;S. Cheng;P. Yashar;V. Dravid;S. Barnett
DOI：
10.1146/annurev.ms.24.080194.002405
发表时间：
1994-08
期刊：
Annual Review of Materials Science
影响因子：
--
作者：
S. Barnett;M. Shinn
通讯作者：
S. Barnett;M. Shinn