A continuous surface-potential solution from accumulation to inversion for intrinsic symmetric double-gate MOSFETs
A continuous surface-potential solution from accumulation to inversion for intrinsic symmetric double-gate MOSFETs
复制标题
本征对称双栅 MOSFET 从累积到反转的连续表面电势解决方案
DOI：
10.1080/08927020802609454
复制
发表时间：
2009-04
影响因子：
2.1
通讯作者：
Lining Zhang
中科院分区：
文献类型：
--
作者：
Jin He;Rui Zheng;Mansun Chan;Jian Zhang;Lining Zhang
A continuous surface-potential solution of Poisson's equation is derived for intrinsic (or lightly doped) symmetric double-gate (DG) Metal-Oxide-Semiconductor-Field-Effect-Transistors (MOSFETs). The resulting expression is smooth and continuous from accumulation through depletion to inversion regions. The dependences of the surface potential on various physical parameters including the quasi-Fermi potential, silicon film thickness, gate dielectric thickness and temperature are studied and compared with 2-D numerical simulation. Excellent agreements between them suggest that the proposed surface-potential solution is accurate over a wide range of physical parameters and can be used in surface-potential-based symmetric DG MOSFET modelling.
登录
查看更多内容
影响因子：
1.7
作者：
R. V. Langevelde;F. Klaassen
通讯作者：
R. V. Langevelde;F. Klaassen
影响因子：
3.1
作者：
K. Joardar;K. Gullapalli;C. McAndrew;M. Burnham;A. Wild
通讯作者：
K. Joardar;K. Gullapalli;C. McAndrew;M. Burnham;A. Wild
影响因子：
3.1
作者：
C. McAndrew;J. Victory
通讯作者：
C. McAndrew;J. Victory
影响因子：
3.1
作者：
A. Ortiz-Conde;F. García-Sánchez;S. Malobabic
通讯作者：
A. Ortiz-Conde;F. García-Sánchez;S. Malobabic
影响因子：
3.1
作者：
Huaxin Lu;Y. Taur
通讯作者：
Huaxin Lu;Y. Taur