Analysis of Low Dimensional Nanoscaled Inversion-Mode InGaAs MOSFETs for Next-Generation Electrical and Photonic Applications
Analysis of Low Dimensional Nanoscaled Inversion-Mode InGaAs MOSFETs for Next-Generation Electrical and Photonic Applications
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用于下一代电气和光子应用的低维纳米级反转模式 InGaAs MOSFET 分析
DOI：
10.1155/2015/423791
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发表时间：
2015-03
影响因子：
1.5
通讯作者：
Liu, P. S.
中科院分区：
文献类型：
--
作者：
Chen, X. Y.;Luo, X. D.;Xu, W. W.;Liu, P. S.
本文详细研究了用Si界面钝化层（IPL）和高栅氧化层HfO_2生长的In_（0.53）Ga_（0.47）As MOSFET的电学特性。分别模拟分析了Si IPL厚度、栅氧化层HfO2厚度、掺杂深度以及源漏层浓度对MOSFET在固定栅、漏电压下输出和传输特性的影响。建议根据它们对最大漏电流、漏电流、饱和电压等的影响来确定上述参数。结果表明，沟道长度随着最大漏电流和漏电流的增大而减小。当沟道长度小于0.9 μm时，短沟道效应开始出现，当沟道长度进一步减小到0.5 μm时，短沟道效应急剧增加，器件性能下降并达到工作极限。结果表明，短沟道模拟的设计和优化下一代电子和光子器件的有用性。
The electrical characteristics of In0.53Ga0.47As MOSFET grown with Si interface passivation layer (IPL) and high gate oxide HfO2 layer have been investigated in detail. The influences of Si IPL thickness, gate oxide HfO2 thickness, the doping depth, and concentration of source and drain layer on output and transfer characteristics of the MOSFET at fixed gate or drain voltages have been individually simulated and analyzed. The determination of the above parameters is suggested based on their effect on maximum drain current, leakage current, saturated voltage, and so forth. It is found that the channel length decreases with the increase of the maximum drain current and leakage current simultaneously. Short channel effects start to appear when the channel length is less than 0.9 μm and experience sudden sharp increases which make device performance degrade and reach their operating limits when the channel length is further lessened down to 0.5 μm. The results demonstrate the usefulness of short channel simulations for designs and optimization of next-generation electrical and photonic devices.
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影响因子：
4.9
作者：
F. Xue;A. Jiang;Han Zhao;Yen‐Ting Chen;Yanzhan Wang;F. Zhou;J. Lee
通讯作者：
F. Xue;A. Jiang;Han Zhao;Yen‐Ting Chen;Yanzhan Wang;F. Zhou;J. Lee
影响因子：
3
作者：
Xuan Hu;K. Jiao;Wei Sun;J. You
通讯作者：
Xuan Hu;K. Jiao;Wei Sun;J. You
影响因子：
3.1
作者：
S. Tewari;A. Biswas;A. Mallik
通讯作者：
S. Tewari;A. Biswas;A. Mallik
基于室温多数载流子传输的反常高效 InAs 纳米线光电晶体管
影响因子：
29.4
作者：
Guo, Nan;Hu, Weida;Lu, Wei
通讯作者：
Lu, Wei
影响因子：
4
作者：
F. Zhu;Han Zhao;I. Ok;H. Kim;J. Yum;Jack C. Lee;N. Goel;W. Tsai;C. K. Gaspe;M. Santos
通讯作者：
F. Zhu;Han Zhao;I. Ok;H. Kim;J. Yum;Jack C. Lee;N. Goel;W. Tsai;C. K. Gaspe;M. Santos