Suspended InAsnanowire gate-all-around field-effect transistors
Suspended InAsnanowire gate-all-around field-effect transistors
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悬浮式InAs纳米线全栅场效应晶体管
DOI：
10.1063/1.4896105
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发表时间：
2014-09
影响因子：
4
通讯作者：
H. Q. Xu
中科院分区：
文献类型：
--
作者：
Dong Pan;Jingyun Wang;Jianhua Zhao;H. Q. Xu
栅极全包围场效应晶体管实现薄，单晶，纯相InAs纳米线生长的分子束外延。在室温下，当源极-漏极偏置电压为50 mV，栅长为1 μ m，栅底搭接距源极和漏极为1 μ m时，晶体管显示出所需的接近10 μ A的高通态电流I-on和高达10（6）的通-断电流比I-on/I-off。在低温下，通态电流I-on仅略微减小，而I-on/I-off之比增加到10（7）。纳米线沟道中的场效应迁移率也进行了研究，发现在室温下类似于1500 cm（2）/V s，在低温下类似于2000 cm（2）/V s。晶体管的优异性能解释在纳米线中的载流子的强静电和量子限制方面。(C)2014 A1P Publishing LLC.（减）
Gate-all-around field-effect transistors are realized with thin, single-crystalline, pure-phase InAs nanowires grown by molecular beam epitaxy. At room temperature, the transistors show a desired high on-state current I-on of similar to 10 mu A arid an on-off current ratio I-on/I-off of as high as 10(6) at sourcedrain bias voltage of 50 mV and gate length of 1 mu m with a gate underlap spacing of 1 mu m from the source and from the drain. At low temperatures, the on-state current I-on is only slightly reduced, while the ratio I-on/I-off is increased to 10(7). The field-effect mobility in the nanowire channels is also investigated and found to be similar to 1500 cm(2)/V s at room temperature and similar to 2000 cm(2)/V s at low temperatures. The excellent performance of the transistors is explained in terms of strong electrostatic and quantum confinements of carriers in the nanowires. (C) 2014 A1P Publishing LLC. (Less)
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影响因子：
10.8
作者：
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通讯作者：
D. Suyatin;Jie J. Sun;Andreas Fuhrer;D. Wallin;L. Fröberg;L. Karlsson;I. Maximov;L. Wallenberg
影响因子：
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影响因子：
4
作者：
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通讯作者：
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影响因子：
3.5
作者：
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通讯作者：
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影响因子：
3.1
作者：
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通讯作者：
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