Investigation of trench process variation on the recessed-gate junctionless MOSFETs considering the circuit application
Investigation of trench process variation on the recessed-gate junctionless MOSFETs considering the circuit application
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考虑电路应用的凹栅无结 MOSFET 沟槽工艺变化的研究
DOI：
10.1088/1361-6641/ab87df
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发表时间：
2020-06
影响因子：
1.9
通讯作者：
Lin Xinnan
中科院分区：
文献类型：
--
作者：
Li Wentao;Lou Haijun;Lin Xinnan
在这项工作中，我们调查的影响，沟槽工艺变化（TPV）的反相器电路建立的凹栅无结MOSFET（JLM）。通过数值仿真，发现这种随机变化会使逆变器的传输延迟（tp）和静态噪声容限（SNM）等模拟参数产生严重波动。同时，亚阈值摆幅（SS）和阈值电压的JLM被发现伴随着明显的波动下的TPV，并有显着的线性关系SNM和tp，分别。从器件层面分析了TPV的物理机制，将其分为沟槽形状变化和沟道厚度变化。然后，TPV被发现有一个更严重的影响比随机掺杂波动的JLM的特性在SS，离子和DIBL。为保证器件的SS值合理提供了工艺指导。最后，电荷等离子体的概念被引入到N型凹栅JLM获得一个上级免疫力的工艺变化。这项工作突出了TPV的影响，并提供了一个有用的指导方针，以抑制它。
In this work, we investigate the effect of trench process variation (TPV) on the inverter circuits built by the recessed-gate junctionless MOSFET (JLM). Through numerical simulation, analog parameters of inverters like the propagation delay (tp) and the static noise margin (SNM) are found to fluctuate seriously due to this random variation. At the same time, subthreshold swing (SS) and threshold voltage of JLMs are found accompanying apparent fluctuations under the TPV and have a strikingly linear relationship with the SNM and tp, respectively. The physics insights of TPV are also analyzed from device level by separating it into the trench shape variation and channel thickness variation, respectively. Then the TPV is found to have a more severe impact on the characteristics of JLMs than the random dopant fluctuation in terms of SS, Ion and DIBL. And a processing guideline is offered to ensure a reasonable SS value of the device. Finally, the charge plasma concept is introduced into the N-type recessed-gate JLM for obtaining a superior immunity of the process variation. This work highlights the impact of the TPV and provides a useful guideline to suppress it.
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DOI：
--
发表时间：
2015-06
期刊：
2015 Silicon Nanoelectronics Workshop (SNW)
影响因子：
--
作者：
Yan-Bo Liu;Y. Jhan;Cheng-Ping Wang;Yung-Chun Wu
通讯作者：
Yan-Bo Liu;Y. Jhan;Cheng-Ping Wang;Yung-Chun Wu
影响因子：
4.9
作者：
Y. Jhan;V. Thirunavukkarasu;Cheng-Ping Wang;Yung-Chun Wu
通讯作者：
Y. Jhan;V. Thirunavukkarasu;Cheng-Ping Wang;Yung-Chun Wu
影响因子：
0.6
作者：
R. Hosseini
通讯作者：
R. Hosseini
影响因子：
4.9
作者：
Sahu, Chitrakant;Singh, Jawar
通讯作者：
Singh, Jawar
影响因子：
1.7
作者：
Chan-Hoon Park;M. Ko;Kihyun Kim;R. Baek;C. Sohn;C. Baek;S. Park;M. Deen;Y. Jeong;Jeong-Soo Lee
通讯作者：
Chan-Hoon Park;M. Ko;Kihyun Kim;R. Baek;C. Sohn;C. Baek;S. Park;M. Deen;Y. Jeong;Jeong-Soo Lee