Al2O3/GeOx gate stack on germanium substrate fabricated by in situ cycling ozone oxidation method
Al2O3/GeOx gate stack on germanium substrate fabricated by in situ cycling ozone oxidation method
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原位循环臭氧氧化法制备锗基Al2O3/GeOx栅叠层
DOI：
10.1063/1.4894631
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发表时间：
2014-09
影响因子：
4
通讯作者：
刘洪刚
中科院分区：
文献类型：
--
作者：
赵威;常虎东;曾振华;刘洪刚
系统地研究了原子层沉积(ALD)系统中采用原位循环臭氧氧化(COO)方法在低温下制备的Al_2O_3/GeOX/Ge栅堆栈。CoO处理获得了最小界面陷阱密度为1.90 × 1011 cm−2 EV−1等优异的电学性能。用X射线光电子能谱(XPS)和椭圆偏振光谱(SE)研究了CoO处理对Al_2O_3与Ge的能带排列的影响。XPS和SE研究表明，AlD-Al_2O_3的栅漏是由亚隙状态引起的，这可能与Al_2O_3网络中的羟基相关基团有关。结果表明，COO方法能有效地修复高k介质中与OH有关的缺陷，并为高性能的Ge MOS器件形成优良的高k/Ge界面。
Al2O3/GeOx/Ge gate stack fabricated by an in situ cycling ozone oxidation (COO) method in the atomic layer deposition (ALD) system at low temperature is systematically investigated. Excellent electrical characteristics such as minimum interface trap density as low as 1.9 × 1011 cm−2 eV−1 have been obtained by COO treatment. The impact of COO treatment against the band alignment of Al2O3 with respect to Ge is studied by x-ray photoelectron spectroscopy (XPS) and spectroscopic ellipsometry (SE). Based on both XPS and SE studies, the origin of gate leakage in the ALD-Al2O3 is attributed to the sub-gap states, which may be correlated to the OH-related groups in Al2O3 network. It is demonstrated that the COO method is effective in repairing the OH-related defects in high-k dielectrics as well as forming superior high-k/Ge interface for high performance Ge MOS devices.
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影响因子：
2.3
作者：
S. Takagi;T. Maeda;N. Taoka;M. Nishizawa;Y. Morita;K. Ikeda;Y. Yamashita;M. Nishikawa;H. Kumagai;R. Nakane;S. Sugahara;N. Sugiyama
通讯作者：
S. Takagi;T. Maeda;N. Taoka;M. Nishizawa;Y. Morita;K. Ikeda;Y. Yamashita;M. Nishikawa;H. Kumagai;R. Nakane;S. Sugahara;N. Sugiyama
影响因子：
3.9
作者：
Delabie, A.;Alian, A.;Meuris, M.
通讯作者：
Meuris, M.
影响因子：
3.1
作者：
Y. Fukuda;Y. Yazaki;Y. Otani;T. Sato;H. Toyota;T. Ono
通讯作者：
Y. Fukuda;Y. Yazaki;Y. Otani;T. Sato;H. Toyota;T. Ono
影响因子：
3.2
作者：
N. Bhat;K. Saraswat
通讯作者：
N. Bhat;K. Saraswat
影响因子：
4
作者：
A. Wada;Rui Zhang;S. Takagi;S. Samukawa
通讯作者：
A. Wada;Rui Zhang;S. Takagi;S. Samukawa