Research on the Combined Effects of Ionization and Displacement Defects in NPN Transistors Based on Deep Level Transient Spectroscopy
Research on the Combined Effects of Ionization and Displacement Defects in NPN Transistors Based on Deep Level Transient Spectroscopy
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基于深能级瞬态光谱的NPN晶体管电离与位移缺陷综合影响研究
DOI：
10.1109/tns.2015.2408331
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发表时间：
2015-04
影响因子：
1.8
通讯作者：
Ma Guoliang
中科院分区：
文献类型：
--
作者：
Li Xingji;Liu Chaoming;Yang Jianqun;Ma Guoliang
研究了3DG 110硅NPN双极结晶体管（BJT）基区-集电极结在不同注量的6 MeV C离子辐照下电离缺陷和位移缺陷的联合效应特性。Gummel曲线用于表征在给定注量下电流增益的退化。低注量的6 MeV C离子辐照时，辐照注量与BJT的辐照响应之间存在非线性关系，这是由于C离子与BJT的联合作用引起的。深能级瞬态谱（DLTS）在不同偏压下表征了深能级中心的演化。一个不寻常的发现是，随着偏压的增加，深能级中心的DLTS峰的幅度减小。DLTS测量结果表明，6 MeV C离子引起的界面陷阱对NPN BJT基区-集电结中的位移缺陷有明显的增强作用。同时，DLTS测量中使用的偏压和辐照能量密度两个因素会影响氧化物陷阱电荷引起的DLTS信号特性。随着偏压或辐照注量的增加，DLTS谱中由氧化物电荷引起的缺陷峰的高度和温度都增加，说明缺陷的浓度和能级都增加了。
The properties of the combined effect between ionization and displacement defects have been researched on the base-collector junctions of 3DG110 silicon NPN bipolar junction transistors (BJTs) irradiated by 6 MeV carbon (C) ions with different fluence. The Gummel curve is used to characterize the degradation of the current gain at a given fluence. Nonlinear relationship, induced by 6 MeV C ions with lower fluence, between irradiation fluence and BJT radiation response can be observed, which is attributed to the combined effect. Evolution of deep level centers is characterized by the deep level transient spectroscopy (DLTS) with various biases. An unusual discovery is that the deep level centers decrease in the amplitude of DLTS peaks with increasing the biases. Based on the results of DLTS measurement, interface traps caused by 6 MeV C ions produce apparent enhanced effect to displacement defects in the base-collector junction of NPN BJT. Meanwhile, two factors, including bias used in DLTS measurement and irradiation fluence, can influence characteristics of DLTS signals caused by oxide-trapped charge. With increasing the bias or the irradiation fluence, both the height and the temperature of the defect peaks induced by the oxide charge in DLTS spectra will increase, illustrating concentration and energy level of the defects are enhanced.
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影响因子：
1.8
作者：
G. Summers;E. Burke;C. Dale;E. A. Wolicki;P. Marshall;M. Gehlhausen
通讯作者：
G. Summers;E. Burke;C. Dale;E. A. Wolicki;P. Marshall;M. Gehlhausen
DOI：
10.1016/j.nima.2011.12.011
发表时间：
2012-04
影响因子：
1.4
作者：
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通讯作者：
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影响因子：
1.8
作者：
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通讯作者：
S. Díez;M. Lozano;G. Pellegrini;F. Campabadal;I. Mandić;D. Knoll;B. Heinemann;M. Ullán
影响因子：
1.8
作者：
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通讯作者：
Xingji Li;Chaoming Liu;Jianqun Yang;J. Bollmann
影响因子：
1.8
作者：
S. Díez;M. Lozano;G. Pellegrini;I. Mandić;D. Knoll;B. Heinemann;M. Ullán
通讯作者：
S. Díez;M. Lozano;G. Pellegrini;I. Mandić;D. Knoll;B. Heinemann;M. Ullán