Investigation of Total-Ionizing Dose Effects on the Two-Dimensional Transition Metal Dichalcogenide Field-Effect Transistors
Investigation of Total-Ionizing Dose Effects on the Two-Dimensional Transition Metal Dichalcogenide Field-Effect Transistors
复制标题
二维过渡金属二硫化物场效应晶体管的总电离剂量效应研究
DOI：
10.1109/access.2019.2922408
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发表时间：
2019-06
期刊：
影响因子：
3.9
通讯作者：
Chen Zhuojun
中科院分区：
文献类型：
--
作者：
Zheng Shuyun;Zeng Yun;Chen Zhuojun
基于二维过渡金属双硫族化合物（TMD）的场效应晶体管（FET）具有优良的电学性能，是未来空间应用的理想选择。然而，器械性能受到总电离剂量（TID）效应的显著影响。本文通过建立一个基于表面电位的漏电流模型，对TMD FET的TID效应进行了全面的研究。不仅辐射诱导的陷阱电荷，但也迁移率退化纳入所提出的模型。对底栅TMD FET的模拟结果与实验数据吻合较好。基于所提出的方法的有效性，TID效应对绝缘体上TMD（TMD-on-insulator，TMDOI）FET的影响，提出并讨论了在不同的总剂量水平。结果表明，表面电势对氧化层陷阱电荷有很强的依赖性，是导致阈值电压负移和漏电流显著增加的主要原因。此外，界面陷阱电荷降低了载流子的有效迁移率，这是导致载流子迁移率降低和亚阈值电压摆幅增大的主要原因。最后，本文给出了一些可能的缓解技术的TID效应的TMD场效应管。
Due to the excellent electrical properties, the emerging field-effect transistor (FET) based on two-dimensional transition metal dischalcogenide (TMD) is an excellent candidate for future space applications. However, the device performance is significantly impacted by total-ionizing dose (TID) effects. In this paper, the TID effects of TMD FETs are investigated comprehensively by means of developing a surface-potential based drain current model. Not only the radiation-induced trapped charges but also mobility degradation are incorporated into the proposed model. The model approach is demonstrated for a bottom-gated TMD FET, that simulation results are in good agreement with the experimental data. Based on the validity of the proposed method, the influence of TID effects on the TMD-on-insulator (TMDOI) FET is presented and discussed under different total dose levels. The results show that surface potential is strongly dependent on the oxide trapped charges, resulting in a major contribution to the negative shift of threshold voltage and the significant increase of leakage current. Besides, the interface trapped charges reduce the effective carrier mobility, which plays a dominant role on the decrease of transconductance and increase of subthreshold voltage swing. Finally, this paper gives insight into some possible mitigation techniques of TID effects on TMD FETs.
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