High-performance top-gated graphene-nanoribbon transistors using zirconium oxide nanowires as high-dielectric-constant gate dielectrics.
High-performance top-gated graphene-nanoribbon transistors using zirconium oxide nanowires as high-dielectric-constant gate dielectrics.
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DOI：
10.1002/adma.200904415
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发表时间：
2010-05-04
影响因子：
29.4
通讯作者：
Duan, Xiangfeng
中科院分区：
文献类型：
--
作者：
Liao, Lei;Bai, Jingwei;Lin, Yung-Chen;Qu, Yongquan;Huang, Yu;Duan, Xiangfeng
石墨烯在过去几年中引起了人们的极大兴趣。[1-5]新的物理现象已经被预测和观察到，如载流子迁移率，[6]电子-空穴对称性和量子霍尔效应，[2，4，7-9]以及弱局域化的强抑制。[10-12]对于主流逻辑应用，石墨烯纳米带（GNRs），作为石墨烯或展开的碳纳米管的薄条，由于边缘效应和量子限制，预计是半导体的。[13-15]最近的实验研究也表明，GNRs可以有效地用作室温场效应晶体管的半导体沟道。[16-22]通过改变GNR在选定点处的宽度，还可以在用于单电子晶体管的GNR内创建石墨烯量子点。[23]这些研究代表了基于GNR的电子学的重要进展。然而，迄今为止的大多数努力采用硅衬底作为全局背栅，并且采用氧化硅作为栅漏极。虽然这样的器件已经导致了许多有趣的科学发现，但是由于所需的高栅极开关电压以及不能独立地寻址半导体器件上的多个单元，因此其对于实际应用的用途将是有限的。
Graphene has attracted a great deal of interest in the past several years.[1–5] New physics has been predicted and observed, such as ultrahigh carrier mobility,[6] electron-hole symmetry and quantum hall effect,[2, 4, 7–9] and the strong suppression of weak localization.[10–12] For mainstream logic application, graphene nanoribbons (GNRs), as thin strips of graphene or unrolled carbon nanotubes, are predicted to be semiconducting due to edge effects and quantum confinement.[13–15] Recent experimental studies have also demonstrated that GNRs can effectively function as a semiconducting channel for roomtemperature field-effect transistors.[16–22] By varying the width of GNRs at selected points, it is also possible to create graphene quantum dots within a GNR for single electron transistors.[23] These studies represent important advances in GNR based electronics. However, most of the efforts to date employ a silicon substrate as a global back gate and silicon oxide as the gate dielectrics. While such a device has led to many interesting scientific discoveries, it will be of limited use for practical applications due to the high gate switching voltage required and the inability to independently address multiple units on the
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影响因子：
10.8
作者：
Bai, Jingwei;Duan, Xiangfeng;Huang, Yu
通讯作者：
Huang, Yu
DOI：
10.1016/j.physe.2007.06.020
发表时间：
2007-12-01
影响因子：
3.3
作者：
Chen, Zhihong;Lin, Yu-Ming;Avouris, Phaedon
通讯作者：
Avouris, Phaedon
影响因子：
4
作者：
Lee, Bongki;Park, Seong-Yong;Kim, Jiyoung
通讯作者：
Kim, Jiyoung
影响因子：
3.1
作者：
Duan, Xiangfeng
通讯作者：
Duan, Xiangfeng
影响因子：
2.1
作者：
Bolotin, K. I.;Sikes, K. J.;Stormer, H. L.
通讯作者：
Stormer, H. L.