Increase of photogenerated carriers in thick quantum wells in InGaN solar cells verified by laser-assisted capacitance-voltage measurement
Increase of photogenerated carriers in thick quantum wells in InGaN solar cells verified by laser-assisted capacitance-voltage measurement
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通过激光辅助电容电压测量验证 InGaN 太阳能电池厚量子阱中光生载流子的增加
DOI：
10.1088/2053-1591/aa6bcb
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发表时间：
2017-04
影响因子：
2.3
通讯作者：
Zhang Jian
中科院分区：
文献类型：
--
作者：
Liu Wei;Zhao Degang;Jiang Desheng;Chen Ping;Shi Dongping;Liu Zongshun;Zhu Jianjun;Yang Jing;Li Xiang;Liang Feng;Liu Shuangtao;Xing Yao;Zhang Liqun;Li Mo;Zhang Jian
对于InGaN/GaN多量子阱（MQW）太阳能电池，已知在较厚的InGaN量子阱中，光生载流子的收集受到较强的压电场和增强的非辐射复合过程的影响，这可能导致厚阱太阳能电池的性能较差。然而，我们发现，我们的MQW太阳能电池的光伏强度与不同的阱厚度几乎是相同的。结合激光照射下电容-电压测量得到的表观载流子浓度分布，我们认为厚量子阱中光生载流子的增加可以部分抵消厚阱InGaN多量子阱太阳电池中极化效应和材料质量恶化对光电流的不利影响.
For the InGaN/GaN multiple quantum well (MQW) solar cells, it is known that in the thicker InGaN QWs the collection of photogenerated carriers suffer from the impact of both stronger piezoelectric field and enhanced non-radiative recombination process, which may lead to an inferior performance for thick-well solar cells. However, we find that the photovoltaic intensities of our MQW solar cells with different well thickness are almost the same. Combined with the profiles of apparent carrier concentration obtained from the capacitance-voltage measurement with additional laser illumination, we conclude that the increase of photogenerated carriers in the thick QWs may partially counteract the adverse effects of both polarization effect and deteriorated material quality on the photocurrent for the MQW solar cells with thick InGaN well layers, compared with the thin-well ones.
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影响因子：
4
作者：
J. R. Lang;N. Young;R. Farrell;Yuh‐Renn Wu;J. Speck
通讯作者：
J. R. Lang;N. Young;R. Farrell;Yuh‐Renn Wu;J. Speck
影响因子：
3.7
作者：
B. Pantha;H. Wang;N. Khan;Jingyu Lin;Hongxing Jiang
通讯作者：
B. Pantha;H. Wang;N. Khan;Jingyu Lin;Hongxing Jiang
影响因子：
1.5
作者：
Lai Wang;Hongtao Li;Guangyi Xi;Yang Jiang;Wei Zhao;Yanjun Han;Yi Luo
通讯作者：
Lai Wang;Hongtao Li;Guangyi Xi;Yang Jiang;Wei Zhao;Yanjun Han;Yi Luo
影响因子：
5.1
作者：
Liang Jing;H. Xiao;Xiaoliang Wang;Cuimei Wang;Qingwen Deng;Zhi-Da Li;Jieqin Ding;Zhan-guo Wang-Zhan-guo-Wa
通讯作者：
Liang Jing;H. Xiao;Xiaoliang Wang;Cuimei Wang;Qingwen Deng;Zhi-Da Li;Jieqin Ding;Zhan-guo Wang-Zhan-guo-Wa
影响因子：
4
作者：
L. Redaelli;A. Mukhtarova;S. Valdueza-Felip;A. Ajay;C. Bougerol;C. Himwas;J. Faure-Vincent;C. Dura
通讯作者：
L. Redaelli;A. Mukhtarova;S. Valdueza-Felip;A. Ajay;C. Bougerol;C. Himwas;J. Faure-Vincent;C. Dura