Detailing Influence of Contact Condition and Island Edge on Dual-Configuration Kelvin Pseudo-MOSFET Method
Detailing Influence of Contact Condition and Island Edge on Dual-Configuration Kelvin Pseudo-MOSFET Method
复制标题
接触条件和岛边缘对双配置开尔文伪 MOSFET 方法的详细影响
DOI：
10.1109/ted.2021.3074115
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发表时间：
2021
影响因子：
3.1
通讯作者：
Sato Shingo
中科院分区：
文献类型：
--
作者：
Mori Daigo;Nakata Iori;Matsuda Masayoshi;Sato Shingo
本文报道了接触条件和岛边缘对pseudo-metal-oxide-semiconductor-field-effect-transistor(伪MOSFET)方法电学特性的影响。我们的测量揭示了经典的伪MOSFET方法在接触条件下的敏感性。我们阐明了关态(一种电学特性)的存在是通过化学处理来调节绝缘体上硅片的表面状态来控制的。Kelvin伪MOSFET方法揭示了影响每个载流子势垒高度的表面条件可以决定电学特性以及即使在高压下加载探头也需要考虑金属-半导体接触的影响。并分析了岛屿边缘的影响。阐明了采用双组态开尔文伪MOSFET方法精确抵消岛状边缘影响的必要性。讨论了金属探头如何放置在试件上的影响。为了提取沟道电阻和载流子迁移率等电学参数，我们揭示了探针必须相对于样品对称放置。
This article reports the influence of both contact condition and island edge on the electrical characteristics of the pseudo-metal-oxide-semiconductor-field-effect-transistor (pseudo-MOSFET) method. Our measurements reveal the sensitivity of the classical pseudo-MOSFET method on contact condition. We clarify that the presence of the OFF-state (an electrical characteristic) is controlled by modulating the surface condition of silicon on insulator wafer via chemical treatment. The Kelvin pseudo-MOSFET method reveals that surface condition, which impacts the barrier height for each carrier, can determine the electrical characteristics and the necessity to consider the influence of metal-semiconductor contact even if the probes are loaded at high pressure. The influence of the island edge is also analyzed. We clarify the necessity of using the dual-configuration Kelvin pseudo-MOSFET method to precisely offset the influence of the island edge. The influence of how the metal probes are placed on the specimen is discussed. To extract electrical parameters such as channel resistance and carrier mobility, we reveal that the probes must be placed symmetrically with respect to the specimen.
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影响因子：
1.6
作者：
Thorsteinsson, Sune;Wang, Fei;Hansen, Ole
通讯作者：
Hansen, Ole
重新审视岛边对伪 MOSFET 方法电特性的影响
DOI：
10.1109/eurosoi-ulis49407.2020.9365378
发表时间：
2020
期刊：
2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
影响因子：
--
作者：
Daigo Mori;Shingo Sato
通讯作者：
Shingo Sato
裸 SOI 晶圆上分割 $Chbox{--}V$ 测量的 $RC$ 模型的频率依赖性
影响因子：
4.9
作者：
A. Diab;I. Ionica;G. Ghibaudo;S. Cristoloveanu
通讯作者：
S. Cristoloveanu
绝缘体上硅衬底上点接触技术的有效迁移率提取
影响因子：
3.2
作者：
C. Fernandez;N. Rodriguez;C. Márquez;A. Ohata;F. Allibert
通讯作者：
F. Allibert
具有沉积金属触点的绝缘体上硅的非平衡体电位测量
影响因子：
3.1
作者：
M. Alepidis;A. Bouchard;C. Delacour;M. Bawedin;I. Ionica
通讯作者：
I. Ionica