Effect of nitrogen pressure on structure and optical properties of pulsed laser deposited BCN thin films
Effect of nitrogen pressure on structure and optical properties of pulsed laser deposited BCN thin films
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氮气压力对脉冲激光沉积BCN薄膜结构和光学性能的影响
DOI：
10.1016/j.surfcoat.2009.11.033
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发表时间：
2010-02
影响因子：
5.4
通讯作者：
Q.Yang
中科院分区：
文献类型：
--
作者：
C.B.Wang;L.M.Zhang;D.M.Zhang;Q.Shen;S.Zhang;Q.Yang
通过在氮气气氛中激光烧蚀碳化硼 (B4C) 靶材，在 Si (100) 和石英基板上沉积非晶硼碳氮化物 (BCN) 薄膜。研究了氮气压力（pN2）对薄膜沉积速率、成分、结构和光学性能的影响。通过表面轮廓仪测量薄膜沉积速率，在 pN2 升高时，薄膜沉积速率从 3.4 纳米/分钟增加到 6.25 纳米/分钟。通过X射线光电子能谱（XPS）和傅里叶变换红外（FTIR）光谱研究了薄膜的结构和组成。 FTIR和XPS分析表明沉积态BCN薄膜含有B-C、N-C和B-N化学键，这意味着形成了三元BCN化合物。薄膜中的氮含量逐渐增加，然后在 10Pa pN2 下饱和至~26at.%。随着pN2从2Pa增加到15Pa，光学带隙(Eg)从3.78增加到3.92eV。 Egis 根据薄膜成分和键合状态的变化而演变。
Amorphous boron carbon nitride (BCN) thin films were deposited on Si (100) and quartz substrates by laser ablation of a boron carbide (B4C) target in nitrogen atmosphere. The effects of the nitrogen pre ssure (pN2) on the film deposition rate, composition, structure and optical properties were investigated. The film deposition rate was measured by a surface profiler, which increased from 3.4 to 6.25nm/min at elevated pN2. Structure and composition of the films were investigated by X-ray photoelectron spectroscopy (XPS) and Fourier-transform infrared (FTIR) spectroscopy. FTIR and XPS analyses indicated that the as-deposited BCN films contained B–C, N–C and B–N chemical bonds, implying the formation of ternary BCN compounds. The nitrogen content in the films increased gradually and then saturated up to ∼26at.% at 10Pa pN2. The optical band gap (Eg) increased from 3.78 to 3.92eV with increasing pN2from 2 to 15Pa. The evolution of Egis in accordance with the change of film compositions and bonding states.
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DOI：
10.1007/s003390100954
发表时间：
2002-04
期刊：
Applied Physics A
影响因子：
--
作者：
F. Kokai;M. Taniwaki;M. Ishihara;Yoshinori Koga
通讯作者：
F. Kokai;M. Taniwaki;M. Ishihara;Yoshinori Koga
影响因子：
6.7
作者：
P. Petrov;D. Dimitrov;D. Papadimitriou;G. Beshkov;V. Krastev;C. Georgiev
通讯作者：
P. Petrov;D. Dimitrov;D. Papadimitriou;G. Beshkov;V. Krastev;C. Georgiev
影响因子：
5.4
作者：
S. Ulrich;A. Kratzsch;H. Leiste;M. Stüber;P. Schlossmacher;H. Holleck;J. Binder;D. Schild;S. Westermeyer;P. Becker;H. Oechsner
通讯作者：
S. Ulrich;A. Kratzsch;H. Leiste;M. Stüber;P. Schlossmacher;H. Holleck;J. Binder;D. Schild;S. Westermeyer;P. Becker;H. Oechsner
影响因子：
3.2
作者：
D. Das;Kuei-Hsien Chen;S. Chattopadhyay;Li‐Chyong Chen
通讯作者：
D. Das;Kuei-Hsien Chen;S. Chattopadhyay;Li‐Chyong Chen
影响因子：
4
作者：
M. Watanabe;S. Itoh;K. Mizushima;T. Sasaki
通讯作者：
M. Watanabe;S. Itoh;K. Mizushima;T. Sasaki