Self-organized growth of higher manganese silicide nanowires on Si(1 1 1), (1 1 0) and (0 0 1) surfaces
Self-organized growth of higher manganese silicide nanowires on Si(1 1 1), (1 1 0) and (0 0 1) surfaces
复制标题
高硅化锰纳米线在Si(1 1 1)、(1 1 0)和(0 0 1)表面上的自组织生长
DOI：
10.1016/j.actamat.2011.08.050
复制
发表时间：
2011-12
期刊：
影响因子：
9.4
通讯作者：
D. Wang
中科院分区：
文献类型：
--
作者：
Z.-Q. Zou;W.C. Li;J.M. Liang;D. Wang
采用反应外延法，在温度高于~ 500℃的条件下，在Si（111）、Si（110）和Si（001）三种衬底上生长出了具有大宽高比的高硅化锰纳米线（NWs）。NWs的自组装被限制在Si < 110 >方向，导致NWs分别在Si（110）、（001）和（111）表面沿一个、两个和三个特定方向长轴定向。扫描隧道光谱和透射电子显微镜（TEM）研究明确地表明NWs是四方的MnSi1.7。NWs的宽度在每种衬底上都有一个最大值或定义明确的值，尽管长度变化很大。在平面透射电镜显微镜下，NWs表现出两组莫尔条纹：一组沿长度方向，具有较大的周期性；另一组沿宽度方向，具有很小的周期性。这些现象强烈表明NW的生长受应变驱动的能量机制控制，NW形状是由硅化物和Si衬底之间的各向异性晶格失配引起的。本研究为硅化NWs在硅衬底上的可控生长铺平了道路，有助于推进硅化NWs在纳米电子学中的实际应用。
Higher manganese silicide nanowires (NWs) with a large aspect ratio have been grown on three kinds of substrate, Si(111), (110) and (001), with the reactive epitaxy method at temperatures above ∼500°C. The self-assembly of the NWs is confined along the Si〈110〉 directions, resulting in the NWs orienting with the long axis along one, two and three particular directions on the Si(110), (001) and (111) surfaces, respectively. Scanning tunneling spectroscopy and transmission electron microscopy (TEM) studies indicate unambiguously that the NWs are tetragonal MnSi1.7. The width of the NWs has a maximum or well-defined value on each kind of substrate, though the length varies greatly. In the plan-view TEM micrographs, the NWs exhibit two sets of Moiré fringes: one is along the length direction and has a large periodicity, and the other is along the width direction and has a very small periodicity. These phenomena strongly indicate that the growth of NWs is governed by a strain-driven energetic mechanism and the NW shape results from anisotropic lattice mismatch between the silicide and the Si substrate. This research paves the way towards controllable growth of the silicide NWs on silicon substrates, which may help to advance the realization of practical applications of silicide NWs in nanoelectronics.
登录
查看更多内容
影响因子：
1.4
作者：
P. Bennett;B. Ashcroft;Zhian He;R. Tromp
通讯作者：
P. Bennett;B. Ashcroft;Zhian He;R. Tromp
影响因子：
3.2
作者：
Chen, Y;Ohlberg, DAA;Williams, RS
通讯作者：
Williams, RS
影响因子：
4
作者：
C. Preinesberger;G. Pruskil;S. K. Becker;M. Dähne;D. Vyalikh;S. Molodtsov;C. Laubschat;F. Schiller
通讯作者：
C. Preinesberger;G. Pruskil;S. K. Becker;M. Dähne;D. Vyalikh;S. Molodtsov;C. Laubschat;F. Schiller
影响因子：
4
作者：
Miyoko Tanaka;F. Chu;M. Shimojo;M. Takeguchi;K. Mitsuishi;K. Furuya
通讯作者：
Miyoko Tanaka;F. Chu;M. Shimojo;M. Takeguchi;K. Mitsuishi;K. Furuya
影响因子：
3.2
作者：
Stevens, M;He, Z;Bennett, PA
通讯作者：
Bennett, PA