Ultra-low specific on-resistance vertical double-diffused metal - Oxide semiconductor with a high-k dielectric-filled extended trench
Ultra-low specific on-resistance vertical double-diffused metal - Oxide semiconductor with a high-k dielectric-filled extended trench
复制标题
超低导通电阻垂直双扩散金属-氧化物半导体，具有高 k 电介质填充延伸沟槽
DOI：
10.1088/1674-1056/22/2/027305
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发表时间：
2013-02
影响因子：
1.7
通讯作者：
Wu, L.J
中科院分区：
文献类型：
--
作者：
Jiang, Y.H;Wang, Q;Zhou, K;Wu, L.J
An ultra-low specific on-resistance trench gate vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench (HK TG VDMOS) is proposed in this paper. The HK TG VDMOS features a high-k (HK) trench below the trench gate. Firstly, the extended HK trench not only causes an assistant depletion of the n-drift region, but also optimizes the electric field, which therefore reduces Ron,sp and increases the breakdown voltage (BV). Secondly, the extended HK trench weakens the sensitivity of BV to the n-drift doping concentration. Thirdly, compared with the superjunction (SJ) vertical double-diffused metal-oxide semiconductor (VDMOS), the new device is simplified in fabrication by etching and filling the extended trench. The HK TG VDMOS with BV = 172 V and Ron,sp = 0.85 mΩcm2 is obtained by simulation; its Ron,sp is reduced by 67% and 40% and its BV is increased by about 15% and 5%, in comparison with those of the conventional trench gate VDMOS (TG VDMOS) and conventional superjunction trench gate VDMOS(SJ TG CDMOS).
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