Simulation of two-transistor parallel and series circuits for gas sensing validated by experimental data
Simulation of two-transistor parallel and series circuits for gas sensing validated by experimental data
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通过实验数据验证的气体传感双晶体管并联和串联电路仿真
DOI：
10.1007/s10825-020-01591-6
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发表时间：
2021
影响因子：
2.1
通讯作者：
Huang, Jia
中科院分区：
文献类型：
--
作者：
Wondmagegn, W.;Chu, Yingli;Li, Hui;Katz, Howard E.;Huang, Jia
模拟和测试了并联和串联电路配置的有机场效应晶体管（OFFEs）的气敏活性。该器件基于PQT 12和PQTS 12有机半导体薄膜。一个二维有限元模拟方法的实施。假设由于缺陷和晶界而产生的陷阱均匀地分布在整个半导体膜中。在模拟中使用高斯陷阱分布。在有机活性材料中的掺杂依赖的跳跃迁移率模型占气体传感。在聚合物沟道和栅极绝缘体之间的界面处的界面陷阱和电荷被并入。晶体管在并联和串联配置进行了研究。与单个基于OFET的传感器相比，电路配置实现了对分析物的显著增加的灵敏度，如模拟所示，并且与实验观察一致。这支持了组合晶体管以增强分析物灵敏度的概念，并提供了一种用于针对高信号-漂移比预先筛选OFV组合的方法。串联电路的漏极电流的绝对值低于并联电路的漏极电流的绝对值;然而，串联电路显示出更高的分析物灵敏度。
Organic field effect transistors (OFETs) in parallel and series circuit configurations are simulated and tested for gas sensing activity. The devices are based on PQT12 and PQTS12 organic semiconductor thin films. A two-dimensional finite element simulation methodology is implemented. It is assumed that traps due to defects and grain boundaries are uniformly distributed throughout the semiconductor film. Gaussian trap distributions are used in the simulation. Gas sensing is accounted for by a doping-dependent hopping mobility model in the organic active material. Interface traps and charges at the interface between the polymer channel and gate insulator are incorporated. Transistors in both parallel and series configurations are studied. Compared to individual OFET-based sensors, the circuit configuration achieves significantly increased sensitivity to analyte, as indicated by the simulation and in agreement with experimental observations. This supports the concept of combining transistors to enhance analyte sensitivity and provides a method for advance screening of combinations of OFETs for high signal-to-drift ratios. The absolute value of drain currents for series circuits is lower than that of parallel circuits; however, the series circuits display higher analyte sensitivity.
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影响因子：
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作者：
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通讯作者：
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DOI：
--
发表时间：
2004
期刊：
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DOI：
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2004
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影响因子：
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作者：
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DOI：
--
发表时间：
1962
期刊：
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