Effect of Temperature-Dependent Low Oxygen Partial Pressure Annealing on SiC MOS.
Effect of Temperature-Dependent Low Oxygen Partial Pressure Annealing on SiC MOS.
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DOI：
10.3390/nano14020192
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发表时间：
2024-01-15
期刊：
影响因子：
5.3
通讯作者：
Avram, Andrei
中科院分区：
文献类型：
--
作者：
Zhang, Qian;You, Nannan;Wang, Jiayi;Xu, Yang;Zhang, Kuo;Wang, Shengkai;Aldrigo, Martino;Lepadatu, Ana-Maria;Nastase, Florin;Avram, Andrei
氧后退火是一种很有前途的方法，可以在不引入外源原子的情况下提高SiC金属氧化物半导体（MOS）界面的质量。此外，低氧分压退火气氛可以防止SiC的额外氧化，抑制新缺陷的产生。本文主要研究了不同温度（900 ~ 1250℃）下低氧分压退火对SiO2/SiC叠层的影响及其机理。采用N2作为保护气体，实现低氧分压退火气氛。x射线光电子能谱（XPS）表征证实在界面处或界面附近没有N原子。通过降低界面陷阱密度（Dit）和边界陷阱密度（Nbt），证明了低氧分压退火是提高界面质量的有效方法。真空退火和飞行时间二次离子质谱（ToF-SIMS）结果表明，界面附近的氧空位（V[O]）填充是主要的退火机制。在退火气氛中，随着温度的升高，界面附近的V[O]更多地被O2填充。
Oxygen post annealing is a promising method for improving the quality of the SiC metal oxide semiconductor (MOS) interface without the introduction of foreign atoms. In addition, a low oxygen partial pressure annealing atmosphere would prevent the additional oxidation of SiC, inhibiting the generation of new defects. This work focuses on the effect and mechanism of low oxygen partial pressure annealing at different temperatures (900–1250 °C) in the SiO2/SiC stack. N2 was used as a protective gas to achieve the low oxygen partial pressure annealing atmosphere. X-ray photoelectron spectroscopy (XPS) characterization was carried out to confirm that there are no N atoms at or near the interface. Based on the reduction in interface trap density (Dit) and border trap density (Nbt), low oxygen partial pressure annealing is proven to be an effective method in improving the interface quality. Vacuum annealing results and time of flight secondary ion mass spectrometry (ToF-SIMS) results reveal that the oxygen vacancy (V[O]) filling near the interface is the dominant annealing mechanism. The V[O] near the interface is filled more by O2 in the annealing atmosphere with the increase in temperature.
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DOI：
10.2183/pjab.98.011
发表时间：
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影响因子：
3.1
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