Gradual variation method for thick GaN heteroepitaxy by hydride vapour phase epitaxy
Gradual variation method for thick GaN heteroepitaxy by hydride vapour phase epitaxy
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氢化物气相外延厚GaN异质外延渐变法
DOI：
10.1088/1674-1056/20/9/098101
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发表时间：
2011-09
影响因子：
1.7
通讯作者：
Zhang Guo-Yi
中科院分区：
文献类型：
--
作者：
Du Yan-Hao;Wu Jie-Jun;Luo Wei-Ke;Goldsmith, John;Han Tong;Tao Yue-Bin;Yang Zhi-Jian;Yu Tong-Jun;Zhang Guo-Yi
采用氢化物气相外延（HVPE）生长了两种应变状态的GaN样品，分别标记为应变消除样品和质量改善样品，并通过高分辨X射线衍射、光致发光和光学显微镜对其进行了表征。HVPE中GaN的两种应变状态，类似于金属有机化学气相沉积（MOCVD）中的3D和2D生长模式，为解决应变消除和质量改善的异质外延问题提供了有效途径。渐变生长法（GVM）是基于两种应变状态发展起来的，其特征是生长参数在应变释放生长条件和质量改善生长条件之间交替渐变。在GVM中，应变释放幅度的引入，这是由从质量改善的生长条件的范围内定义的应变释放生长条件，使应变释放控制简洁有效。在2英寸蓝宝石衬底上生长出的300 μm厚的GaN薄膜显示了GVM的有效性。
Two strain-state samples of GaN, labelled the strain-relief sample and the quality-improved sample, were grown by hydride vapour phase epitaxy (HVPE), and then characterized by high-resolution X-ray diffraction, photoluminescence and optical microscopy. Two strain states of GaN in HVPE, like 3D and 2D growth modes in metal-organic chemical vapour deposition (MOCVD), provide an effective way to solve the heteroepitaxial problems of both strain relief and quality improvement. The gradual variation method (GVM), developed based on the two strain states, is characterized by growth parameters' gradual variation alternating between the strain-relief growth conditions and the quality-improved growth conditions. In GVM, the introduction of the strain-relief amplitude, which is defined by the range from the quality-improved growth conditions to the strain-relief growth conditions, makes the strain-relief control concise and effective. The 300-μm thick bright and crack-free GaN film grown on a two-inch sapphire proves the effectiveness of GVM.
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影响因子：
1.8
作者：
Huang, Hsin-Hsiung;Chao, Chu-Li;Lee, Wei-I
通讯作者：
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1.8
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影响因子：
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作者：
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通讯作者：
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影响因子：
1.8
作者：
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通讯作者：
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