Assembly of a high-dielectric constant thin TiOx layer directly on H-terminated semiconductor diamond
Assembly of a high-dielectric constant thin TiOx layer directly on H-terminated semiconductor diamond
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直接在 H 封端半导体金刚石上组装高介电常数薄 TiOx 层
DOI：
10.1063/1.4939650
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发表时间：
2016-01
影响因子：
4
通讯作者：
Ye, Haitao
中科院分区：
文献类型：
--
作者：
Shi, Baogui;Gu, Changzhi;Koide, Yasuo;Ye, Haitao
通过在空气中低温氧化薄钛层的方法在氢终止金刚石（H-金刚石）表面制备了高介电常数（高k）的TiOx薄膜。通过溅射沉积来沉积金属钛层。计算所得TiOx的介电常数为约12。基于TiOx/H-diamond的金属氧化物半导体（MOS）的电容密度高达0.75 µF/cm 2，这是由于高k值和非常薄的TiOx层厚度。在-2V的正向偏压下，漏电流小于10-7A，反向偏压下漏电流小于10-13 A。利用具有非常薄厚度的高k TiOx带来了每十倍65 mV的理想低亚阈值摆幅斜率和在低栅极电压下改善的漏极电流的特征。对金刚石MOSFET采用高k介质的优点进行了展望。
A high-dielectric constant (high-k) TiOx thin layer was fabricated on hydrogen-terminated diamond (H-diamond) surface by low temperature oxidation of a thin titanium layer in ambient air. The metallic titanium layer was deposited by sputter deposition. The dielectric constant of the resultant TiOx was calculated to be around 12. The capacitance density of the metal-oxide-semiconductor (MOS) based on the TiOx/H-diamond was as high as 0.75 µF/cm2 contributed from the high-k value and the very thin thickness of the TiOx layer. The leakage current was lower than 10-13 A at reverse biases and 10-7A at the forward bias of -2 V. The MOS field-effect transistor based on the high-k TiOx/H-diamond was demonstrated. The utilization of the high-k TiOx with a very thin thickness brought forward the features of an ideally low subthreshold swing slope of 65 mV per decade and improved drain current at low gate voltages. The advantages of the utilization high-k dielectric for diamond MOSFETs are anticipated.
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影响因子：
4.6
作者：
Liu J;Liao M;Imura M;Tanaka A;Iwai H;Koide Y
通讯作者：
Koide Y
影响因子：
4
作者：
Nebel, CE;Sauerer, C;Jackman, R
通讯作者：
Jackman, R
影响因子：
8.6
作者：
M. Reiners;Ke Xu;N. Aslam;A. Devi;R. Waser;S. Hoffmann‐Eifert
通讯作者：
M. Reiners;Ke Xu;N. Aslam;A. Devi;R. Waser;S. Hoffmann‐Eifert
DOI：
10.1116/1.4757132
发表时间：
2012-10
期刊：
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
影响因子：
--
作者：
S. Wright;C. P. Judge;M. J. Lee;D. F. Bowers;M. Dunbar;C. Wilson
通讯作者：
S. Wright;C. P. Judge;M. J. Lee;D. F. Bowers;M. Dunbar;C. Wilson
影响因子：
2.1
作者：
Takeyasu Saito;K. Park;K. Hirama;H. Umezawa;M. Satoh;H. Kawarada;Zhi-Quan Liu;K. Mitsuishi;K. Furuya;H. Okushi
通讯作者：
Takeyasu Saito;K. Park;K. Hirama;H. Umezawa;M. Satoh;H. Kawarada;Zhi-Quan Liu;K. Mitsuishi;K. Furuya;H. Okushi