Influence of base resistance on extracting thermal resistance for SiGe HBTs
Influence of base resistance on extracting thermal resistance for SiGe HBTs
复制标题
基极电阻对 SiGe HBT 提取热阻的影响
DOI：
10.1002/mmce.20606
复制
发表时间：
2012-05
影响因子：
1.7
通讯作者：
高建军
中科院分区：
文献类型：
--
作者：
T. Zhou;X. Xu;P. Li;高建军
本文研究了基区电阻对SiGe异质结双极晶体管热阻提取的影响，提出了一种改进的结温和热阻提取方法。所提出的方法提取热阻是基于温度敏感性的基极-发射极（B-E）的电压时，设备偏置与一个固定的发射极电流密度。该方法不仅考虑了不同环境温度测量时的自热效应，而且在功耗增量测量时，由于基极电阻的影响，修正了B-E电压的经验公式。结果得到不同的发射极长度和手指的设备。与传统方法相比，发射区面积为0.3 × 1.9 μm2的器件热阻提高了15%左右，发射区面积为0.3 × 13.9 μm2的器件热阻提高了13.8%左右。精确的热阻实现在EQUIUM模型导致更好地适应晶体管的输出特性。© 2012 Wiley Periodicals，Inc. Int J RF and Microwave CAE，2012.
In this article, the influence of base resistance on extracting thermal resistance for SiGe heterojunction bipolar transistors is studied and an improved approach for determining the junction temperature and thermal resistance is presented. The proposed method for extracting thermal resistance is based on the temperature sensitivity of the base–emitter (B–E) voltage when the device is biased with a fixed emitter current density. This approach not only takes into account the self‐heating during the different ambient temperature measurement but also revises the empirical equation of B–E voltage due to the influence of base resistance during the power dissipation increment measurement. Results are obtained for devices with different emitter lengths and fingers. Compared with the conventional method, the thermal resistance is about up to 15% improvement for the device with 0.3 × 1.9 μm2 emitter area and 13.8% for the device with 0.3 × 13.9 μm2 emitter area. The accurate thermal resistance implemented in HICUM model has resulted in better fit for transistor output characteristics. © 2012 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2012.
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DOI：
10.1109/smic.2001.942350
发表时间：
2001-09
期刊：
2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (IEEE Cat. No.01EX496)
影响因子：
--
作者：
J. Rieh;D. Greenberg;Basanth Jagannathan;G. Freeman;S. Subbanna
通讯作者：
J. Rieh;D. Greenberg;Basanth Jagannathan;G. Freeman;S. Subbanna
影响因子：
8.3
作者：
R. V. D. Toorn;W. Kloosterman
通讯作者：
R. V. D. Toorn;W. Kloosterman
影响因子：
3.6
作者：
J. McMacken;S. Nedeljkovic;J. Gering;D. Halchin
通讯作者：
J. McMacken;S. Nedeljkovic;J. Gering;D. Halchin
DOI：
10.1109/bipol.2002.1042895
发表时间：
2002-12
期刊：
Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting
影响因子：
--
作者：
H. Mnif;T. Zimmer;J. Battaglia;B. Ardouin
通讯作者：
H. Mnif;T. Zimmer;J. Battaglia;B. Ardouin
影响因子：
3.1
作者：
N. Bovolon;P. Baureis;J. Muller;P. Zwicknagl;R. Schultheis;E. Zanoni
通讯作者：
N. Bovolon;P. Baureis;J. Muller;P. Zwicknagl;R. Schultheis;E. Zanoni