Double intermediate bonding layers for the fabrication of high-quality silicon-on-insulator-based exfoliated Ge film with excellent high-temperature characteristics
Double intermediate bonding layers for the fabrication of high-quality silicon-on-insulator-based exfoliated Ge film with excellent high-temperature characteristics
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双中间键合层用于制造具有优异高温特性的高质量绝缘体上硅基剥离Ge薄膜
DOI：
10.1088/1361-6463/ab5dcd
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发表时间：
2020-02
期刊：
影响因子：
--
通讯作者：
Songyan Chen
中科院分区：
文献类型：
--
作者：
Shaoying Ke;Jinrong Zhou;Ziwei Wang;Donglin Huang;Yuxiang Wang;Qiang Peng;Cheng Li;Songyan Chen
研究了两种不同中间键合层的硅基锗薄膜的高温特性。对于非晶Ge（a-Ge）键合层，由于a-Ge的晶化，在键合界面处出现许多气泡，从而在SOI上形成Ge坑。当晶片对在400 °C下退火时，新的气泡出现并合并，导致Ge膜破裂，这是由于新的气泡不能足够快地转移出两种单晶材料的结合界面。对于a-Ge/a-Si键合层，多孔a-Si可以充当键合界面处的储存器以吸收副产物。随着a-Si层厚度的增加，气泡密度减小。当引入30 nm厚的a-Si层时，在500 °C下退火后没有观察到新的气泡。更重要的是，具有a-Ge/a-Si键合层的Ge膜的质量在后退火后显著改善。这是由于a-Si（无晶向）对点缺陷的修复和对穿透位错形核的抑制作用。本文提出了一种高质量的异质光电混合集成方法，为Ge/Si、GeSn/Si和III-V/Si的低温集成提供了指导。
We investigate the high-temperature characteristics of wafer-bonded silicon-on-insulator (SOI)-based Ge film with two different intermediate bonding layers. For an amorphous Ge (a-Ge) bonding layer, due to the crystallization of a-Ge, many gas bubbles appear at the bonded interface to form Ge pits on the SOI. When the wafer pairs are annealed at ⩾400 °C, new gas bubbles appear and merge, leading to cracking of the Ge film due to the fact that the new gas bubbles cannot be transferred sufficiently rapidly out of the bonded interface of two single-crystal materials. For an a-Ge/a-Si bonding layer, the porous a-Si can serve as a reservoir at the bonded interface to absorb the by-products. With increase in a-Si layer thickness, the gas bubble density decreases. New gas bubbles are not observed after annealing at 500 °C when a 30 nm thick a-Si layer is introduced. More importantly, the quality of the Ge film with an a-Ge/a-Si bonding layer significantly improves after post-annealing. This can be explained by the repair of the point defects and restraining of the nucleation of threading dislocations by a-Si (no crystal orientation). This work presents high-quality heterogeneous hybrid integration of photoelectric materials by wafer bonding, which may give guidance for the low-temperature integration of Ge/Si, GeSn/Si and III–V/Si.
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