A Novel High Voltage Ultra-Thin SOI-LDMOS With Sectional Linearly Doped Drift Region
A Novel High Voltage Ultra-Thin SOI-LDMOS With Sectional Linearly Doped Drift Region
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一种新型分段线性掺杂漂移区高压超薄SOI-LDMOS
DOI：
10.1109/led.2019.2919074
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发表时间：
2019-07
影响因子：
4.9
通讯作者：
Bo
中科院分区：
文献类型：
--
作者：
Zhang;Wentong;Li;Lu;Qiao;Ming;Zhan;Zhenya;Cheng;Shikang;Zhang;Sen;He;Boyong;Luo;Xiaorong;Li;Zhaoji;Zhang;Bo
提出并实验实现了一种具有分段线性掺杂漂移区的高压超薄绝缘体上硅(SOI)横向双扩散金属氧化物半导体场效应晶体管(LDMOS)。新器件采用分段线性掺杂(SLD)技术，在直插式SOI层中进行分段线性掺杂，源场极板覆盖了整个漂移区。通过增加高阻区的局部掺杂浓度，获得了低比导通电阻。建立了一个分析模型，为场板薄型SOI器件的设计提供了指导。SOI SLD-LDMOS的实验结果表明，新器件的击穿电压高达960V，优良的品质因数(FOM；FOM；INLINE-FORMULATE>；<；TEX-MASHORM ANT=“LaTeX”>；与其他报道的薄型SOI器件相比，$={V}_{\Text{B}}{^{\Text{2}}/{R}_{\Text{On，SP}}$<；/Tex-Math；<；/Inline-Formal&>)为5.98 mW/cm。该模型与实验结果吻合较好。
A novel high voltage ultra-thin silicon on insulator (SOI) lateral double diffused metal oxide semiconductor field effect transistor (LDMOS) with a sectional linearly doped drift region is proposed and experimentally realized in this letter. The new device features a sectional linear doping (SLD) in a <inline-formula> <tex-math notation="LaTeX">$0.17~ {\mu }\text{m}$ </tex-math></inline-formula> SOI layer with a source field plate covering the full drift region. Low specific on-resistance <inline-formula> <tex-math notation="LaTeX">${R} _{\text {on,sp}}$ </tex-math></inline-formula> is obtained by increasing the local doping concentration of the high resistance region. An analytical model is developed to provide the design guidance for the thin SOI devices with the field plate. The experimental results of the SOI SLD-LDMOS demonstrate that the new device shows a high breakdown voltage <inline-formula> <tex-math notation="LaTeX">${V} _{\text {B}}$ </tex-math></inline-formula> of 960 V with a superior figure of merit (FOM <inline-formula> <tex-math notation="LaTeX">$= {V} _{\text {B}}{^{\text {2}}} / {R} _{\text {on,sp}}$ </tex-math></inline-formula>) of 5.98 MW/cm<sub>2</sub> when comparing with other reported thin SOI devices. Good agreements are observed between the model and the experimental results.
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影响因子：
5.1
作者：
Wang Zhongjian;Chen Xinhong;Xia Chao;Xu Dawei;Cao Duo;Song Zhaorui;Yu Yuehui;Shen Dashen
通讯作者：
Wang Zhongjian;Chen Xinhong;Xia Chao;Xu Dawei;Cao Duo;Song Zhaorui;Yu Yuehui;Shen Dashen
DOI：
10.1109/bipol.2007.4351842
发表时间：
2007-10
期刊：
2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
影响因子：
--
作者：
F. Udrea
通讯作者：
F. Udrea
影响因子：
1.7
作者：
Qiao Ming;Zhuang Xiang;Wu Lijuan;Zhang Wentong;Wen Hengjuan;Zhang Bo;L. Zhaoji
通讯作者：
Qiao Ming;Zhuang Xiang;Wu Lijuan;Zhang Wentong;Wen Hengjuan;Zhang Bo;L. Zhaoji
DOI：
10.1109/ispsd.1997.601428
发表时间：
1997-05
期刊：
Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's
影响因子：
--
作者：
T. Letavic;E. Arnold;M. Simpson;R. Aquino;H. Bhimnathwala;R. Egloff;A. Emmerik;S. Wong;
通讯作者：
T. Letavic;E. Arnold;M. Simpson;R. Aquino;H. Bhimnathwala;R. Egloff;A. Emmerik;S. Wong;
DOI：
10.1109/icmel.2004.1314574
发表时间：
2004-05
期刊：
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)
影响因子：
--
作者：
J. Roig;D. Flores;I. Cortés;S. Hidalgo;J. Millán
通讯作者：
J. Roig;D. Flores;I. Cortés;S. Hidalgo;J. Millán