A Novel L-Gate InGaAs/GaAsSb TFET with Improved Performance and Suppressed Ambipolar Effect.
A Novel L-Gate InGaAs/GaAsSb TFET with Improved Performance and Suppressed Ambipolar Effect.
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一种具有改进性能并抑制双极效应的新型 L 栅极 InGaAs/GaAsSb TFET
DOI：
10.3390/mi13091474
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发表时间：
2022-09-05
期刊：
影响因子：
3.4
通讯作者：
Liu H
中科院分区：
文献类型：
--
作者：
Ma B;Chen S;Wang S;Han T;Zhang H;Yin C;Chen Y;Liu H
本文提出了一种适用于低压工作的L栅异质结隧穿场效应晶体管(HJ-LTFET)，并用TCAD工具对其进行了研究。在HJ-LTFET中采用了InGaAs/GaAsSb异质结来提高导通电流。由于InGaAs/GaAsSb异质结具有准破裂能带排列，使隧道势垒的高度和厚度大大减小。然而，由于势垒高度和厚度的减小，关态漏电流(IOFF)也显著增加，导致了明显的源漏隧道效应(SDT)。为了解决这一问题，在源极和漏极之间插入了HfO2阻挡层。结果表明，插入层可以很好地抑制源漏界面的水平隧穿漏。还进行了功函数调制、掺杂浓度优化、定标能力和模拟/射频性能分析等优化研究。最终得到大离子密度为2 13μA/μm，陡度平均值为8.9 mV/dec，抑制IOF值为10−12μA/μm的HJ-LTFET。不仅如此，在Vd=0.5V时，FT和GBP分别达到最大值68.3 GHz和7.3 GHz。
A heterojunction tunneling field effect transistor with an L-shaped gate (HJ-LTFET), which is very applicable to operate at low voltage, is proposed and studied by TCAD tools in this paper. InGaAs/GaAsSb heterojunction is applied in HJ-LTFET to enhance the ON-state current (ION). Owing to the quasi-broken gap energy band alignment of InGaAs/GaAsSb heterojunction, height and thickness of tunneling barrier are greatly reduced. However, the OFF-state leakage current (IOFF) also increases significantly due to the reduced barrier height and thickness and results in an obvious source-to-drain tunneling (SDT). In order to solve this problem, an HfO2 barrier layer is inserted between source and drain. Result shows that the insertion layer can greatly suppress the horizontal tunneling leakage appears at the source and drain interface. Other optimization studies such as work function modulation, doping concentration optimization, scaling capability, and analog/RF performance analysis are carried out, too. Finally, the HJ-LTFET with a large ION of 213 μA/μm, a steep average SS of 8.9 mV/dec, and a suppressed IOFF of 10−12 μA/μm can be obtained. Not only that, but the fT and GBP reached the maximum values of 68.3 GHz and 7.3 GHz under the condition of Vd = 0.5 V, respectively.
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影响因子：
4.9
作者：
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T 形栅极双源隧道场效应晶体管的模拟/射频性能
影响因子：
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作者：
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影响因子：
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