Timing Performance Simulation for 3D 4H-SiC Detector.
Timing Performance Simulation for 3D 4H-SiC Detector.
复制标题
3D 4H-SiC 探测器的时序性能仿真
DOI：
10.3390/mi13010046
复制
发表时间：
2021-12-28
期刊：
影响因子：
3.4
通讯作者：
Shi X
中科院分区：
文献类型：
--
作者：
Tan Y;Yang T;Liu K;Wang C;Zhang X;Zhao M;Xia X;Liang H;Xu R;Zhao Y;Kang X;Fu C;Song W;Zhang Z;Fan R;Zou X;Shi X
为了应对未来高能物理中探测器的高辐射挑战，研究了一种新型的3D 4H-SiC探测器。由于其高导热性和高原子位移阈值能量，三维4H-SiC探测器有可能在恶劣的辐射和室温环境中工作。它的三维结构使厚度和电极之间的距离去耦，进一步提高了探测器的定时性能和辐射硬度。开发了仿真软件raser (RAdiation SEmiconductoR)，对不同参数和结构的平面和三维4H-SiC探测器的时间分辨率进行了仿真，并通过对同一探测器的模拟和实测时间分辨率结果进行了比较，验证了软件的可靠性。估算了三维4H-SiC探测器的粗糙时间分辨率，仿真参数可为三维4H-SiC探测器的设计和优化提供指导。
To meet the high radiation challenge for detectors in future high-energy physics, a novel 3D 4H-SiC detector was investigated. Three-dimensional 4H-SiC detectors could potentially operate in a harsh radiation and room-temperature environment because of its high thermal conductivity and high atomic displacement threshold energy. Its 3D structure, which decouples the thickness and the distance between electrodes, further improves the timing performance and the radiation hardness of the detector. We developed a simulation software—RASER (RAdiation SEmiconductoR)—to simulate the time resolution of planar and 3D 4H-SiC detectors with different parameters and structures, and the reliability of the software was verified by comparing the simulated and measured time-resolution results of the same detector. The rough time resolution of the 3D 4H-SiC detector was estimated, and the simulation parameters could be used as guideline to 3D 4H-SiC detector design and optimization.
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DOI：
10.1016/j.nima.2005.01.056
发表时间：
2005-04-01
影响因子：
1.4
作者：
Bruzzi, M;Adey, J;Zorzi, N
通讯作者：
Zorzi, N
DOI：
10.1016/s0168-9002(97)00694-3
发表时间：
1997-08-21
影响因子：
1.4
作者：
Parker, SI;Kenney, CJ;Segal, J
通讯作者：
Segal, J
影响因子：
1.3
作者：
Lai, A.
通讯作者：
Lai, A.
影响因子：
1.8
作者：
Rafi, Joan Marc;Pellegrini, Giulio;Moll, Michael
通讯作者：
Moll, Michael
影响因子：
1
作者：
Das, Achintya;Duttagupta, Siddhartha P.
通讯作者：
Duttagupta, Siddhartha P.