Effect of Phase Purity on Dislocation Density of Pressurized-Reactor Metalorganic Vapor Phase Epitaxy Grown InN

Effect of Phase Purity on Dislocation Density of Pressurized-Reactor Metalorganic Vapor Phase Epitaxy Grown InN
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相纯度对加压反应堆金属有机气相外延生长InN位错密度的影响

DOI:
10.1143/jjap.51.04dh02
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发表时间:
2012-04
期刊:
Jpn. J. Appl. Phys
影响因子:
--
通讯作者:
Matsuoka T
Matsuoka T
中科院分区:
其他
文献类型:
--
作者:
Iwabuchi T;Liu Y;Kimura T;Zhang YT;Prasertsuk K;Watanabe H;Usami N;Katayama R;Matsuoka T

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用X射线衍射方法研究了在稳定的纤锌矿InN中引入亚稳Zn InN对加压反应器金属有机物气相外延生长的InN薄膜的穿透位错密度(TDDs)的影响。在1600 Torr下,在500 ~ 700 °C的不同生长温度下,在表面氮化的c面蓝宝石衬底上直接生长InN薄膜。包括ZB-InN的膜显示ZB体积分数与TDDs的边缘分量之间的相关性,而不是TDDs的螺旋分量。该结果可以通过解释如何包括ZB结构的简单模型在晶体学上理解,即,ZB域与WZ域和WZZB域并排存在。这可以通过电子背散射衍射清楚地观察到。
The effect of the metastable zincblende (ZB) InN inclusion in the stable wurtzite (WZ) InN on the threading dislocation densities (TDDs) of an InN film grown by pressurized-reactor metalorganic vapor phase epitaxy has been studied by X-ray diffraction measurements. InN films are directly grown on c-plane sapphire substrates with nitrided surfaces at 1600 Torr with the different growth temperature from 500 to 700 °C. Films including ZB-InN show the correlation between the ZB volume fraction and the edge component of TDDs, not the screw component of TDDs. This result can be crystallographically understood by a simple model explaining how the ZB structure is included, i.e., ZB domains existing side-by-side with WZ domains and twined ZB domains. This can be clearly observed by electron backscatter diffraction.
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