Effect of reset voltage polarity on the resistive switching region of unipolar memory
Effect of reset voltage polarity on the resistive switching region of unipolar memory
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复位电压极性对单极存储器阻变区域的影响
DOI：
10.1002/pssa.201532235
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发表时间：
2015-10
影响因子：
2
通讯作者：
Liu Yichun
中科院分区：
文献类型：
--
作者：
Wang Zhongqiang;Xu Haiyang;Zhao Xiaoning;Lin Ya;Zhang Lei;Ma Jiangang;Liu Yichun
在这项研究中，调查的单极性电阻开关（RS）的InGaZnO薄膜表明，复位电压的极性可以强烈影响RS区域。研究了RS特性对顶部电极（Pt、Al或Cu）的依赖性。选择不对称电极（Cu/InGaZnO/Al），并研究了RS参数（例如，高和低电阻状态、置位和复位电压）可以提供两个指示器来跟踪RS区域的位置。当施加的置位和复位电压具有相同的极性时，RS区域通常位于阳极附近。相比之下，当复位电压具有与置位电压相反的极性时，RS区域优选位于复位过程的阳极而不是阴极（其在置位过程中用作阳极）附近，这指示了RS区域在复位过程期间的移动。在焦耳加热的帮助下，氧离子可以在小电压下克服重置过程中的能垒，导致CF重组并具有相反的形状，这是RS区域漂移机制的原因。
In this study, investigation of the unipolar resistive switching (RS) of InGaZnO film indicates that the reset voltage polarity can strongly affect the RS region. The dependence of the RS characteristics on the top electrode (Pt, Al, or Cu) was investigated. Asymmetrical electrodes (Cu/InGaZnO/Al) were chosen and the dependence of the RS parameters (e.g., high and low resistance states, set and reset voltages) on these two diverse electrodes can provide two indicators to trace the location of the RS region. The RS region is usually located near the anode when the applied set and reset voltages have the same polarity. In comparison, when the reset voltage has the opposite polarity to the set voltage, the RS region prefers to be located near the anode of the reset process rather than the cathode (which is used as the anode in the set process), indicating the movement of the RS region during the reset process. With the aid of joule heating, oxygen ions can overcome the energy barrier during the reset process under small voltage, resulting in the CFs restructuring and having the inverse shape, which is responsible for the drift mechanism of the RS region.
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影响因子：
4
作者：
Kim, Kyung Min;Choi, Byung Joon;Hwang, Cheol Seong
通讯作者：
Hwang, Cheol Seong
影响因子：
38.3
作者：
Kwon, Deok-Hwang;Kim, Kyung Min;Hwang, Cheol Seong
通讯作者：
Hwang, Cheol Seong
影响因子：
3.1
作者：
Fen Chen;M. Shinosky
通讯作者：
Fen Chen;M. Shinosky
铝顶电极氧化铜基阻变存储器的耐久性增强
影响因子：
4
作者：
Lv, Hangbing;Wang, Ming;Chi, M. H.
通讯作者：
Chi, M. H.
DOI：
10.1088/0022-3727/46/27/275103
发表时间：
2013-07
期刊：
Journal of Physics D: Applied Physics
影响因子：
--
作者：
J. Wang;De-Yuan Jian;Y. Ye;Li-Chun Chang;Chao‐Sung Lai
通讯作者：
J. Wang;De-Yuan Jian;Y. Ye;Li-Chun Chang;Chao‐Sung Lai