High-performance flexible organic thin-film transistor nonvolatile memory based on molecular floating-gate and pn-heterojunction channel layer
High-performance flexible organic thin-film transistor nonvolatile memory based on molecular floating-gate and pn-heterojunction channel layer
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基于分子浮栅和pn异质结沟道层的高性能柔性有机薄膜晶体管非易失性存储器
DOI：
10.1063/1.5135043
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发表时间：
2020-01
期刊：
影响因子：
--
通讯作者：
Wei Wang
中科院分区：
文献类型：
--
作者：
Ting Xu;Shuxu Guo;Weihao Qi;Shizhang Li;Meili Xu;Wenfa Xie;Wei Wang
提出了一种基于集成分子浮栅/隧道(I-FG/T)层和pn异质结沟道层的柔性浮栅结构有机薄膜晶体管(FG-OTFT)非易失性存储器(NVM)。用半导体聚合物聚(9，9-二辛基荧烯-苯并噻二唑)纳米粒子和绝缘聚合物聚苯乙烯通过旋涂的方法制备了I-FG/T层。研究了I-FG/T层结构对存储性能的影响。为了获得大的电荷存储容量，制作了由2，9-didecyldinaphtho[2，3-b:2′，3′-f]thieno[3，2-b]thiophene和F16CuPc组成的pn异质结沟道，通过分别在编程和擦除电压下用相反的极性重写存储的电荷来提供电子和空穴用于在浮栅中注入和陷阱。作为优化结果，实现了高性能灵活的FG-OTFT NVM，具有平均21.6 V的大存储窗口，高稳定的电荷存储保持能力高达10 年，以及高可靠的编程/擦除开关耐久超过200个周期。FG-OTFT非易失性存储器还具有优异的机械弯曲耐久性，在弯曲半径为5.9 mm时，其存储性能保持在6000次以上。基于集成的分子浮栅/隧道(I-FG/T)层和pn异质结沟道层，展示了柔性浮栅结构有机薄膜晶体管(FG-OTFT)非易失性存储器(NVM)。用半导体聚合物聚(9，9-二辛基荧烯-苯并噻二唑)纳米粒子和绝缘聚合物聚苯乙烯通过旋涂的方法制备了I-FG/T层。研究了I-FG/T层结构对存储性能的影响。为了获得大的电荷存储容量，制作了由2，9-didecyldinaphtho[2，3-b:2′，3′-f]thieno[3，2-b]thiophene和F16CuPc组成的pn异质结沟道，通过分别在编程和擦除电压下用相反的极性重写存储的电荷来提供电子和空穴用于在浮栅中注入和陷阱。作为优化结果，实现了一种高性能灵活的FG-OTFT NVM，平均存储窗口为21.6VOTFT，并且具有高稳定性。
Flexible floating-gate structural organic thin-film transistor (FG-OTFT) nonvolatile memories (NVMs) are demonstrated based on an integrated molecular floating-gate/tunneling (I-FG/T) layer and a pn-heterojunction channel layer. Semiconducting polymer poly(9,9-dioctylfluorene-co-benzothiadiazole) nanoparticles and insulating polymer polystyrene are used to build the I-FG/T layers by spin-coating their solution. The dependence of the memory performances on the structure of I-FG/T layers is researched. For achieving a large charge storage capacity, the pn-heterojunction channel, consisting of 2,9-didecyldinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene and F16CuPc, is fabricated to provide both electrons and holes for injecting and trapping in the floating gate by overwriting the stored charges with an opposite polarity at the programming and erasing voltages, respectively. As an optimal result, a high performance flexible FG-OTFT NVM is achieved, with a large memory window of 21.6 V on average, a highly stable charge storage retention capability up to 10 years, and a highly reliable programming/erasing switching endurance over 200 cycles. The FG-OTFT NVM also exhibits an excellent mechanical bending durability with the memory performances maintaining well over 6000 bending cycles at a bending radius of 5.9 mm.Flexible floating-gate structural organic thin-film transistor (FG-OTFT) nonvolatile memories (NVMs) are demonstrated based on an integrated molecular floating-gate/tunneling (I-FG/T) layer and a pn-heterojunction channel layer. Semiconducting polymer poly(9,9-dioctylfluorene-co-benzothiadiazole) nanoparticles and insulating polymer polystyrene are used to build the I-FG/T layers by spin-coating their solution. The dependence of the memory performances on the structure of I-FG/T layers is researched. For achieving a large charge storage capacity, the pn-heterojunction channel, consisting of 2,9-didecyldinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene and F16CuPc, is fabricated to provide both electrons and holes for injecting and trapping in the floating gate by overwriting the stored charges with an opposite polarity at the programming and erasing voltages, respectively. As an optimal result, a high performance flexible FG-OTFT NVM is achieved, with a large memory window of 21.6 V on average, a highly stabl...
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基于并五苯/P13/并五苯有机半导体异质结构作为电荷传输层和捕获层的高性能非易失性有机场效应晶体管存储器
DOI：
10.1002/advs.201700007
发表时间：
2017-08
期刊：
Advanced science (Weinheim, Baden-Wurttemberg, Germany)
影响因子：
--
作者：
Li W;Guo F;Ling H;Zhang P;Yi M;Wang L;Wu D;Xie L;Huang W
通讯作者：
Huang W
影响因子：
19
作者：
Baeg, Kang-Jun;Noh, Yong-Young;Kim, Dong-Yu
通讯作者：
Kim, Dong-Yu
影响因子：
19
作者：
Kang, Minji;Baeg, Kang-Jun;Kim, Dong-Yu
通讯作者：
Kim, Dong-Yu
影响因子：
--
作者：
K. Szendrei;D. Jarzab;Zhihua Chen;A. Facchetti;M. Loi
通讯作者：
K. Szendrei;D. Jarzab;Zhihua Chen;A. Facchetti;M. Loi
影响因子：
10.8
作者：
Kim, Soo-Jin;Lee, Jang-Sik
通讯作者：
Lee, Jang-Sik