Defect-free high Sn-content GeSn on insulator grown by rapid melting growth.
Defect-free high Sn-content GeSn on insulator grown by rapid melting growth.
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通过快速熔化生长在绝缘体上生长无缺陷的高 Sn 含量 GeSn
DOI：
10.1038/srep38386
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发表时间：
2016-12-12
影响因子：
4.6
通讯作者：
Wang Q
中科院分区：
文献类型：
--
作者：
Liu Z;Cong H;Yang F;Li C;Zheng J;Xue C;Zuo Y;Cheng B;Wang Q
GeSn 是一种对于硅基光子学极具吸引力的半导体材料。然而，GeSn与Si之间较大的晶格失配以及Sn在Ge中的低溶解度限制了其发展。为了在Si上获得高Sn含量的GeSn，通常在低温下生长，这会导致不可避免的位错。在这里，我们报道了通过快速熔化生长（RMG）横向生长的绝缘体上单晶无缺陷渐变GeSn（GSOI）条纹。 GSOI条带末端的Sn含量达到14.2%。透射电镜观察显示GSOI条纹没有堆垛层错和位错。 P 沟道伪金属氧化物半导体场效应晶体管 (MOSFET) 和金属半导体金属 (MSM) 肖特基结光电探测器是在这些 GSOI 上制造的。获得了良好的晶体管性能和402cm2/Vs的低场峰值空穴迁移率，这表明该GSOI结构具有高质量。观察到 MSM 光电探测器在 1550 nm 和 2000 nm 处有很强的近红外和短波红外光学吸收。由于锡含量高且无缺陷，在 1550 nm 波长下可实现 236 mA/W@-1.5 V 的响应度。此外，在2000nm处响应度达到154mA/W@-1.5 V，光吸收层厚度仅为200nm，这是迄今为止报道的GeSn结光电探测器的最高值。
GeSn is an attractive semiconductor material for Si-based photonics. However, large lattice mismatch between GeSn and Si and the low solubility of Sn in Ge limit its development. In order to obtain high Sn-content GeSn on Si, it is normally grown at low temperature, which would lead to inevitable dislocations. Here, we reported a single-crystal defect-free graded GeSn on insulator (GSOI) stripes laterally grown by rapid melting growth (RMG). The Sn-content reaches to 14.2% at the end of the GSOI stripe. Transmission electron microscopy observation shows the GSOI stripe without stacking fault and dislocations. P-channel pseudo metal-oxide-semiconductor field effect transistors (MOSFETs) and metal-semiconductor-metal (MSM) Schottky junction photodetectors were fabricated on these GSOIs. Good transistor performance with a low field peak hole mobility of 402 cm2/Vs is obtained, which indicates a high-quality of this GSOI structure. Strong near-infrared and short-wave infrared optical absorption of the MSM photodetectors at 1550 nm and 2000 nm were observed. Owing to high Sn-content and defect-free, responsivity of 236 mA/W@-1.5 V is achieved at 1550 nm wavelength. In addition, responsivity reaches 154 mA/W@-1.5 V at 2000 nm with the optical absorption layer only 200 nm-thick, which is the highest value reported for GeSn junction photodetectors until now.
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